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NDSH20120C

Name: onsemi NDSH20120C
Brand: onsemi
SKU: 863-NDSH20120C
Price: 812.15 INR
Availability: InStock

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Mouser No:

863-NDSH20120C

Mfr. No:

NDSH20120C

Mfr.:

onsemi

Description:

SiC Schottky Diodes SIC DIODE GEN2.0 1200V TO

Datasheet:

NDSH20120C Datasheet

ECAD Model:

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More Information

Learn more about onsemi NDSH20120C

In Stock: 174

Stock:: 174 Can Dispatch Immediately

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Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹812.15	₹812.15
	₹559.70	₹5,597.00
	₹447.40	₹44,740.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC Schottky Diodes
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-2
Configuration:	Single
If - Forward Current:	20 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.38 V
Ifsm - Forward Surge Current:	119 A
Ir - Reverse Current:	200 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	NDSH20120C
Packaging:	Tube
Brand:	onsemi
Pd - Power Dissipation:	214 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	450
Subcategory:	Diodes & Rectifiers
Tradename:	EliteSiC
Vr - Reverse Voltage:	1.2 kV

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Datasheet

NDSH20120C Datasheet

PCN

Product Change Notification (PDF)

Material Composition Disclosure

CNHTS:: 8541100000
USHTS:: 8541290095
ECCN:: EAR99

D3 EliteSiC Diodes

onsemi D3 EliteSiC Diodes are a solution for applications requiring high-power PFC and output rectification. The onsemi D3 has a maximum voltage rating of 1200V. These diodes come in two package options, TO-247-2LD and TO-247-3LD, providing flexibility for various designs. The D3 EliteSiC Diodes are optimized for high-temperature operation with low series-resistance temperature dependency, ensuring consistent and reliable performance even under extreme conditions.

NDSH20120C Silicon Carbide (SiC) Diodes

onsemi NDSH20120C Silicon Carbide (SiC) Diodes provide superior switching performance and higher reliability than silicon. The onsemi NDSH20120C features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost.