FFSH1265BDN-F085

onsemi
863-FFSH1265BDN-F085
FFSH1265BDN-F085

Mfr.:

Description:
SiC Schottky Diodes 650V 12A SIC SBD GEN1.5

Datasheet:
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In Stock: 273

Stock:
273 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 273 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹731.46 ₹731.46
₹454.72 ₹4,547.20
₹378.31 ₹45,397.20
₹354.08 ₹1,80,580.80

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC Schottky Diodes
RoHS:  
REACH - SVHC:
Through Hole
TO-247-3
Single
12 A
650 V
1.38 V
24 A
25 nA
- 55 C
+ 175 C
FFSH1265BDN-F085
AEC-Q101
Tube
Brand: onsemi
Pd - Power Dissipation: 52 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 30
Subcategory: Diodes & Rectifiers
Tradename: EliteSiC
Vr - Reverse Voltage: 650 V
Unit Weight: 12.091 g
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Attributes selected: 0

Datasheet

PCN

Compliance Codes
CNHTS:
8541100000
USHTS:
8541100080
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
Korea, Republic of
The country is subject to change at the time of shipment.

650V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.

D2 EliteSiC Diodes

onsemi D2 EliteSiC Diodes are a range of high-performance diodes designed for applications requiring a voltage rating of 650V. The onsemi D2 is available in various packages, including DPAK-3, D2PAK-2, D2PAK-3, PQFN-4, TO-220-2, TO-220-3, TO-247-2, and TO-247-3. These diodes offer low capacitive charge (QC) and are optimized for high-speed switching with low forward voltage. These features make the diodes ideal for power factor correction (PFC) and output rectification applications.

FFSH1265BDN-F085 650V SiC Schottky Diodes

onsemi FFSH1265BDN-F085 650V 12A Silicon Carbide Schottky Diodes use a technology that provides superior switching performance and higher reliability. onsemi FFSH1265BDN-F085 SiC Diodes feature temperature-independent switching characteristics, no reverse recovery current, and excellent thermal performance. Additional benefits include the highest efficiency, faster operating frequency, increased power density, reduced EMI, reduced system size, and increased cost-effectiveness. The FFSH1265BDN-F085 650V, 12A SiC Schottky Diodes are available in a TO-247-3LD package.

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