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NTTFS007P02P8

Name: onsemi NTTFS007P02P8
Brand: onsemi
SKU: 863-NTTFS007P02P8
Price: 105.11 INR
Availability: InStock

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Mouser No:

863-NTTFS007P02P8

Mfr. No:

NTTFS007P02P8

Mfr.:

onsemi

Description:

MOSFETs PT8P 20_8V FROM VANGUARD

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NTTFS007P02P8 Datasheet

ECAD Model:

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Learn more about onsemi NTTFS007P02P8

In Stock: 2,083

Stock:: 2,083 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

₹-.--

Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹105.11	₹105.11
	₹68.64	₹686.40
	₹56.87	₹5,687.00
	₹54.53	₹27,265.00
	₹52.65	₹52,650.00
Full Reel (Order in multiples of 3000)
	₹51.39	₹1,54,170.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PQFN-8
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	56 A
Rds On - Drain-Source Resistance:	6.5 mOhms
Vgs - Gate-Source Voltage:	8 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	44 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	30 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Fall Time:	68 ns
Forward Transconductance - Min:	80 S
Product Type:	MOSFETs
Rise Time:	33 ns
Series:	NTTFS007P02P8
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	119 ns
Typical Turn-On Delay Time:	19 ns

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Datasheet

NTTFS007P02P8 Datasheet

USHTS:: 8541290095
TARIC:: 8541290000
ECCN:: EAR99

NTTFS007P02P8 P-Channel Low/Medium Voltage MOSFET

onsemi NTTFS007P02P8 P-Channel Low/Medium Voltage MOSFET is built using high-performance PowerTrench technology for extremely low R_DS(on)switching performance and ruggedness. This P-channel MOSFET offers high power and current-handling capabilities in a widely used surface-mount package. The NTTFS007P02P8 MOSFET features -20V drain to source voltage, ±8V gate to source voltage, 3.8°C/W thermal resistance, junction to case, and 4.5Ω gate resistance. This P-channel MOSFET is Pb-free, Halide-free, and RoHS compliant. Typical applications include load switch, battery management, power management, and reverse polarity protection.