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NXH020U90MNF2PTG

Name: onsemi NXH020U90MNF2PTG
Brand: onsemi
SKU: 863-NXH020U90MNF2PTG
Price: 16207.73 INR
Availability: InStock

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Mouser No:

863-NXH020U90MNF2PTG

Mfr. No:

NXH020U90MNF2PTG

Mfr.:

onsemi

Description:

MOSFET Modules PIM F2 900V 20MOHM FULL SIC VIENNA RECTIFIER

Datasheet:

NXH020U90MNF2PTG Datasheet

ECAD Model:

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In Stock: 32

Stock:: 32 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Ext. Price:

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹16,207.73	₹16,207.73
	₹16,140.64	₹1,61,406.40

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Press Fit
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	900 V
Id - Continuous Drain Current:	149 A
Rds On - Drain-Source Resistance:	14 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 18 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	352 W
Series:	NXH020U90MNF2
Packaging:	Tray
Brand:	onsemi
Configuration:	Dual Common Source
Fall Time:	12.8 ns
Product Type:	MOSFET Modules
Rise Time:	19.8 ns
Factory Pack Quantity:	20
Subcategory:	Discrete and Power Modules
Tradename:	EliteSiC
Type:	SiC MOSFET Module
Typical Turn-Off Delay Time:	110 ns
Typical Turn-On Delay Time:	43.2 ns
Vf - Forward Voltage:	2.3 V
Vr - Reverse Voltage:	1.2 kV

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Datasheet

NXH020U90MNF2PTG Datasheet

Material Composition Disclosure

Compliance Codes

CNHTS:: 8504409100
USHTS:: 8542390070
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

NXH020U90MNF2 Silicon Carbide (SiC) Modules

onsemi NXH020U90MNF2 Silicon Carbide (SiC) Modules are Vienna SiC modules with 2x 10mohm 900V SiC MOSFET switches. The onsemi devices also have 2x 100A 1200V SiC diodes and a thermistor. The NXH020U90MNF2 is housed in an F2 package. The SiC MOSFET switches use M2 technology and are driven with a 15V to 18V gate drive.