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NTMJS1D5N04CLTWG

Name: onsemi NTMJS1D5N04CLTWG
Brand: onsemi
SKU: 863-NTMJS1D5N04CLTWG
Price: 222.8 INR
Availability: InStock

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Mouser No:

863-NTMJS1D5N04CLTWG

Mfr. No:

NTMJS1D5N04CLTWG

Mfr.:

onsemi

Description:

MOSFETs 40V 1.55 mOhm 185A Single N-Channel

Datasheet:

NTMJS1D5N04CLTWG Datasheet

ECAD Model:

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In Stock: 3,000

Stock:: 3,000 Can Dispatch Immediately

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Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 3000 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹222.80	₹222.80
	₹143.74	₹1,437.40
	₹98.82	₹9,882.00
	₹78.70	₹39,350.00
	₹77.80	₹77,800.00
Full Reel (Order in multiples of 3000)
	₹64.42	₹1,93,260.00
	₹63.43	₹3,80,580.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	200 A
Rds On - Drain-Source Resistance:	2.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	70 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	110 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	9 ns
Forward Transconductance - Min:	256 S
Product Type:	MOSFETs
Rise Time:	140 ns
Series:	NTMJS1D5N04CL
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	31 ns
Typical Turn-On Delay Time:	15 ns
Unit Weight:	99.445 mg

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Datasheet

NTMJS1D5N04CLTWG Datasheet

PCN

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

NTMJS1D5N04CL 40V Industrial Power MOSFET

onsemi NTMJS1D5N04CL 40V Industrial Power MOSFET features a small 5mm x 6mm footprint, low R_DS(on), low Gate Charge (Q_G), and low capacitance. The low R_DS(on) value helps to minimize conduction losses while the low Q_G and low capacitance minimize driver losses. This single N-channel power MOSFET is Pb-free, RoHS-compliant, and features a -55°C to +175°C operating temperature range.