SCT4036KW7TL

ROHM Semiconductor
755-SCT4036KW7TL
SCT4036KW7TL

Mfr.:

Description:
SiC MOSFETs TO263 1.2KV 40A N-CH SIC

Datasheet:
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Learn more about ROHM Semiconductor SCT4036KW7TL

In Stock: 670

Stock:
670 Can Dispatch Immediately
Factory Lead Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 670 will be subject to minimum order requirements.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
₹1,703.33 ₹1,703.33
₹1,209.48 ₹12,094.80
₹1,053.87 ₹1,05,387.00
₹1,045.48 ₹5,22,740.00
Full Reel (Order in multiples of 1000)
₹997.03 ₹9,97,030.00
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
TO-263-7
N-Channel
1 Channel
1.2 kV
40 A
47 mOhms
- 4 V, + 21 V
4.8 V
91 nC
+ 175 C
150 W
Enhancement
Brand: ROHM Semiconductor
Compliance: Done
Configuration: Single
Fall Time: 9.6 ns
Forward Transconductance - Min: 11 S
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: MOSFET's
Product Type: SiC MOSFETS
Rise Time: 15 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 29 ns
Typical Turn-On Delay Time: 8.1 ns
Part # Aliases: SCT4036KW7
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Attributes selected: 0

Datasheet

Specification Sheets

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Compliance Codes
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99
Origin Classifications
Country of Origin:
Thailand
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

SCT4036KW7 N-Ch SiC power MOSFET

ROHM Semiconductor SCT4036KW7 N-Ch SiC power MOSFET is a 1200V, 36mΩ MOSFET in a TO-263-7L package. The SCT4036KW7 is simple to drive and easy to parallel with fast reverse recovery. The SCT4036KW7 is ideal for solar inverters, induction heating, and motor drives.

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