NSVMSD1819A-RT1G

onsemi
863-NSVMSD1819A-RT1G
NSVMSD1819A-RT1G

Mfr.:

Description:
Bipolar Transistors - BJT SS SC70 GP XSTR NPN 50V

ECAD Model:
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In Stock: 11,376

Stock:
11,376 Can Dispatch Immediately
Factory Lead Time:
31 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹24.26 ₹24.26
₹21.11 ₹211.10
₹15.90 ₹1,590.00
₹9.79 ₹4,895.00
₹7.64 ₹7,640.00
Full Reel (Order in multiples of 3000)
₹4.49 ₹13,470.00
₹3.95 ₹23,700.00
₹3.32 ₹29,880.00
₹2.79 ₹66,960.00

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: Bipolar Transistors - BJT
RoHS:  
Si
SMD/SMT
SC-70-3
NPN
Single
200 mA
60 V
60 V
7 V
500 mV
150 mW
+ 150 C
MSD1819A-R
Reel
Cut Tape
Brand: onsemi
Continuous Collector Current: 100 mA
DC Current Gain hFE Max: 340
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
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Attributes selected: 0

USHTS:
8541210095
TARIC:
8541210000
ECCN:
EAR99

MSD1819A-R General Purpose & Low VCE Transistor

onsemi MSD1819A-R General Purpose and Low VCE Transistor is designed for amplifier applications. This NPN transistor features a high current gain (hFE) from 210 to 460 and a low VCE <0.5V. The NPN transistor comes in the SC-70/SOT-323 package, designed for low-power surface mount applications. The silicon epitaxial planar transistor is AEC-Q101 qualified and PPAP capable. This low VCE transistor is Pb and halogen/BFR-free. Typical applications include reverse battery protection, DC-DC converter output driver, and high-speed switching.