It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NVMFWS003N10MCT1G

Name: onsemi NVMFWS003N10MCT1G
Brand: onsemi
SKU: 863-VMFWS003N10MCT1G
Price: 422.11 INR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-VMFWS003N10MCT1G

Mfr. No:

NVMFWS003N10MCT1G

Mfr.:

onsemi

Description:

MOSFETs PTNG 100V STD SO8FL HE

Datasheet:

NVMFWS003N10MCT1G Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NVMFWS003N10MCT1G

In Stock: 86

Stock:: 86

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 1,500

Expected 26-03-2027
Factory Lead Time:: 50

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹422.11	₹422.11
	₹278.61	₹2,786.10
	₹196.61	₹19,661.00
	₹175.18	₹87,590.00
	₹167.72	₹1,67,720.00
Full Reel (Order in multiples of 1500)
	₹156.54	₹2,34,810.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFNW-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	169 A
Rds On - Drain-Source Resistance:	3.1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	62 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	194 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	14 ns
Forward Transconductance - Min:	150 S
Product Type:	MOSFETs
Rise Time:	15 ns
Series:	NVMFWS003N10MC
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	46 ns
Typical Turn-On Delay Time:	28 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NVMFWS003N10MCT1G Datasheet

PCN

Product Change Notification 2024-07-03 (PDF)

Material Composition Disclosure

Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

NVMFWS003N10MC Single N-Channel Power MOSFETs

onsemi NVMFWS003N10MC Single N-Channel Power MOSFETs offer a 169A continuous drain current, 3.1mΩ at 10V R_DS(ON), and 100V drain-to-source voltage. The NVMFWS002N10MCL is available in a 5mm x 6mm flat lead package developed for compact and efficient designs. The onsemi AEC-Q101-qualified MOSFET is PPAP-capable and ideal for automotive applications.