RFUH25NS3S Fast Recovery Diodes

ROHM Semiconductor RFUH25NS3S Fast Recovery Diodes feature ultra-low switching loss and high current overload capacity. These recovery diodes include silicon epitaxial planar-type construction. The RFUH25NS3S recovery diodes offer 350V repetitive peak reverse voltage, 10μA reverse current, and 100A forward current surge peak. These recovery diodes operate at 1.45V maximum forward voltage and stored at -55°C to 150°C temperature range. The RFUH25NS3S super fast recovery diodes are ideal for use in general rectification.

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Description Datasheet Availability Pricing (INR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Maximum Operating Temperature
Qualification
Packaging
ROHM Semiconductor Rectifiers RFU 600V
Datasheet
1,574In Stock
Min.: 1
Mult.: 1
Reel: 1,000

SMD/SMT TO-263S-3 350 V 20 A Super Fast Recovery Diode Single 1.45 V 100 A 10 uA 30 ns + 150 C Reel, Cut Tape
ROHM Semiconductor Rectifiers RECT 430V 20A SM SUPER FST
Datasheet
1,000In Stock
Min.: 1
Mult.: 1
Reel: 1,000

SMD/SMT TO-263S-3 430 V 20 A Super Fast Recovery Diode Single 1.7 V 100 A 10 uA 25 ns + 150 C AEC-Q101 Reel, Cut Tape
ROHM Semiconductor Rectifiers RECT 350V 20A SM SUPER FST
Datasheet
980In Stock
Min.: 1
Mult.: 1
Reel: 1,000

SMD/SMT TO-263S-3 350 V 20 A Super Fast Recovery Diode Single 1.45 V 100 A 10 uA 30 ns + 150 C AEC-Q101 Reel, Cut Tape