BM3G005MUV-LBE2

ROHM Semiconductor
755-BM3G005MUV-LBE2
BM3G005MUV-LBE2

Mfr.:

Description:
GaN FETs PMIC Power Switch/Driver, 650V, 5mO, Low Side Nch

Lifecycle:
Restricted Availability:
This part number is not currently available from Mouser. Product may be in limited distribution or a factory special order.
Datasheet:
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Learn more about ROHM Semiconductor BM3G005MUV-LBE2

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: GaN FETs
RoHS:  
SMD/SMT
VQFN-46
1 Channel
650 V
68.8 A
70 mOhms
- 40 C
+ 105 C
Enhancement
Nano Cap; EcoGaN
2 MHz
Si
Brand: ROHM Semiconductor
Fall Time: 2.7 ns
Packaging: Reel
Packaging: Cut Tape
Product: GaN HEMT Power Stage
Product Type: GaN FETs
Rise Time: 5 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Typical Turn-Off Delay Time: 19 ns
Typical Turn-On Delay Time: 14 ns
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Datasheet

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Compliance Codes
USHTS:
8542390070
MXHTS:
8542399999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Japan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Nano Cap™ 650V GaN HEMT Power Stage ICs

ROHM Semiconductor Nano Cap™ 650V GaN HEMT Power Stage ICs are designed for demanding electronics systems. These ICs boast a blend of high power density and efficiency. The devices integrate a 650V enhancement GaN HEMT and a silicon driver. ROHM Semiconductor Nano Cap 650V GaN HEMT Power Stage ICs are ideal for applications that include industrial equipment, power supplies, bridge topology, and adapters.

In Stock: 931

Stock:
931 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹1,393.93 ₹1,393.93
₹1,028.97 ₹10,289.70
₹984.06 ₹98,406.00
₹980.24 ₹4,90,120.00
Full Reel (Order in multiples of 1000)
₹898.08 ₹8,98,080.00
2,000 Quote

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