XPQR3004PB,LXHQ

Toshiba
757-XPQR3004PBLXHQ
XPQR3004PB,LXHQ

Mfr.:

Description:
MOSFETs L-TOGL N-CH 40V 400A

Datasheet:
ECAD Model:
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In Stock: 1,265

Stock:
1,265
Can Dispatch Immediately
On Order:
16,500
Expected 02-03-2026
Factory Lead Time:
15
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1500)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
₹613.61 ₹613.61
₹440.22 ₹4,402.20
₹336.00 ₹33,600.00
₹327.02 ₹3,27,020.00
Full Reel (Order in multiples of 1500)
₹321.63 ₹4,82,445.00
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
L-TOGL-9
N-Channel
1 Channel
40 V
400 A
470 uOhms
- 20 V, 20 V
3 V
295 nC
+ 175 C
750 W
Enhancement
Reel
Cut Tape
MouseReel
Brand: Toshiba
Fall Time: 130 ns
Product Type: MOSFETs
Rise Time: 65 ns
Factory Pack Quantity: 1500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 395 ns
Typical Turn-On Delay Time: 120 ns
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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

XPQR3004PB 40V 400A Automotive MOSFET

Toshiba XPQR3004PB 40V MOSFET features an RDS(ON) of 0.23mΩ (typical), 400A capability, and a threshold voltage (Vth) of 2V to 3V. Additional features include +175°C maximum operating temperature and 10µA maximum leakage current (VDS = 40V). Toshiba XPQR3004PB MOSFET is offered in an L-TOGL package, which offers 0.2°C/W thermal impedance and 750W power dissipation. This device is AEC-Q101 certified and ideal for automotive applications, switching voltage regulators, motor drivers, and DC-DC converters.

L-TOGL & S-TOGL AEC-Q 40V/80V/100V N-Ch MOSFETs

Toshiba L-TOGL and S-TOGL AEC-Q101 40V/80V/100V N-Channel MOSFETs deliver ultra-low on-resistance, a high drain current rating, and high heat dissipation. This is achieved by combining high heat dissipation packages [L-TOGL (large transistor outline gull-wing leads) and S-TOGL (small transistor outline gull-wing leads)] with the U-MOS IX-H and U-MOS X-H chip processes. Toshiba L-TOGL and S-TOGL MOSFETs also offer high current capability and high heat dissipation to help improve power density in a wide variety of automotive applications. The L-TOGL package is equivalent in size to the existing TO-220SM(W) package. However, XPQR3004PB greatly improves the current rating and significantly lowers the on-resistance to 0.23mΩ typical. L-TOGLs optimized package footprint also helps improve thermal characteristics when compared to the same-sized TO-220SM(W) package.

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