RJP65T43DPM-00#T1

Renesas Electronics
968-RJP65T43DPM-00T1
RJP65T43DPM-00#T1

Mfr.:

Description:
IGBTs POWER TRS1

Lifecycle:
Restricted Availability:
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Datasheet:
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In Stock: 4

Stock:
4 Can Dispatch Immediately
Quantities greater than 4 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
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Ext. Price:
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Pricing (INR)

Qty. Unit Price
Ext. Price
₹1,352.97 ₹1,352.97
₹1,011.00 ₹10,110.00
₹873.10 ₹1,04,772.00
₹826.51 ₹4,21,520.10
₹772.46 ₹7,87,909.20

Product Attribute Attribute Value Select Attribute
Renesas Electronics
Product Category: IGBTs
RoHS:  
Si
TO-3PFM
Through Hole
Single
650 V
1.8 V
- 20 V, 20 V
40 A
68.8 W
+ 175 C
Tube
Brand: Renesas Electronics
Continuous Collector Current Ic Max: 20 A
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: MY
Gate-Emitter Leakage Current: 1 uA
Product Type: IGBT Transistors
Factory Pack Quantity: 30
Subcategory: IGBTs
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Attributes selected: 0

Datasheet

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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

RJP65T43DPM High Speed Switching IGBT

Renesas Electronics RJP65T43DPM High Speed Switching IGBT is a 650V, 20A IGBT with a 20kHz to 100kHz operating frequency range. This IGBT offers low collector-to-emitter saturation voltage and comes in a TO-3PFM package. The RJP65T43DPM IGBT features a 150A collector peak current, 68.8W collector dissipation, and 175°C junction temperature. This IGBT is stored in the -55°C to 150°C temperature range, and typical applications include Power Factor Correction (PFC).

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RENESAS ELECTRONICS

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