It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

S29GL512T10FHI010

Name: Infineon S29GL512T10FHI010
Brand: Infineon Technologies
SKU: 727-29GL512T10FHI010
Price: 1102.32 INR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

727-29GL512T10FHI010

Mfr. No:

S29GL512T10FHI010

Mfr.:

Infineon Technologies

Description:

NOR Flash PNOR

Datasheet:

S29GL512T10FHI010 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies S29GL512T10FHI010

In Stock: 900

Stock:: 900 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹1,102.32	₹1,102.32
	₹1,027.78	₹10,277.80
	₹997.96	₹24,949.00
	₹975.59	₹48,779.50
	₹957.89	₹95,789.00
	₹942.98	₹4,71,490.00
	₹844.21	₹7,59,789.00
2,700	Quote

Alternative Packaging

Mfr. Part No.:

S29GL512T10FHI013

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

₹897.32

Min:

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	NOR Flash
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	FBGA-64
Series:	S29GL512T
Memory Size:	512 Mbit
Supply Voltage - Min:	2.7 V
Supply Voltage - Max:	3.6 V
Active Read Current - Max:	60 mA
Interface Type:	Parallel
Organisation:	64 M x 8/32 M x 16
Data Bus Width:	8 bit/16 bit
Timing Type:	Asynchronous
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Packaging:	Tray
Brand:	Infineon Technologies
Moisture Sensitive:	Yes
Product Type:	NOR Flash
Speed:	100 ns
Factory Pack Quantity:	900
Subcategory:	Memory & Data Storage
Unit Weight:	120 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

S29GL512T10FHI010 Datasheet (PDF)

Statement Regarding the RoHS Compliance of Cypress Products

Compliance Codes

CNHTS:: 8542329090
CAHTS:: 8542320040
USHTS:: 8542320051
JPHTS:: 854232039
KRHTS:: 8542321090
TARIC:: 8542326100
MXHTS:: 8542320201
ECCN:: 3A991.b.1.a

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Thailand
Country of Diffusion:: China

The country is subject to change at the time of shipment.

S29GL01G/512/256/128S MIRRORBIT™ Flash Memory

Infineon Technologies S29GL01G/512/256/128S MIRRORBIT™ Eclipse Flash Memory is optimized for voltage, density, cost-per-bit, reliability, performance, and scalability needs. With densities from 32MB-2GB, each MIRRORBIT Memory Device requires only a single 3.0V power supply for read and write functions. The entire command set is compatible with the JEDEC Flash standards. The MIRRORBIT GL Flash Memory Device family supports Universal Footprint, which provides one footprint across all densities. The flash memory also supports product families and process technologies. This allows manufacturers to design single platform and simple scale Flash memory capacity up or down, depending on features and functionality.

S29GL01GT/512GT MIRRORBIT™ Eclipse™ Flash Memory

Infineon Technologies S29GL01GT / S29GL512GT MIRRORBIT™ Eclipse™ Flash Memory offers a page access time as fast as 15ns with a corresponding random access time as quick as 100ns. These devices feature a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This feature results in faster effective programming time than standard programming algorithms. The Infineon Technologies S29GL01GT / S29GL512GT is ideal for today’s embedded applications requiring higher density, better performance, and lower power consumption.