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STF80N600K6

Name: STMicroelectronics STF80N600K6
Brand: STMicroelectronics
SKU: 511-STF80N600K6
Price: 288.39 INR
Availability: InStock

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Mouser No:

511-STF80N600K6

Mfr. No:

STF80N600K6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET

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Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

STF80N600K6 Datasheet (PDF)

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Learn more about STMicroelectronics STF80N600K6

In Stock: 1,047

Stock:: 1,047 Can Dispatch Immediately

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Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹288.39	₹288.39
	₹144.64	₹1,446.40
	₹141.95	₹14,195.00
	₹118.59	₹59,295.00
	₹104.21	₹1,04,210.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220FP-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	7 A
Rds On - Drain-Source Resistance:	600 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	10.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	23 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	12.6 ns
Product Type:	MOSFETs
Rise Time:	4.1 ns
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	28.2 ns
Typical Turn-On Delay Time:	9 ns
Unit Weight:	1.690 g

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Datasheet

STF80N600K6 Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.