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STMicroelectronics SiC MOSFETs

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Part #

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package

SCT012W90G3-4AG
STMicroelectronics
1: ₹1,864.18
640In Stock
New Product

Mfr. Part No.
SCT012W90G3-4AG

Mouser Part No
511-SCT012W90G3-4AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package

Learn More

Datasheet

640In Stock

₹1,864.18

₹1,589.27

₹1,374.55

Min.: 1
Mult.: 1

Through Hole

HiP247-3

N-Channel

1 Channel

900 V

110 A

15.8 mOhms

- 10 V, + 22 V

3.1 V

138 nC

- 55 C

+ 200 C

625 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package

SCT025W120G3AG
STMicroelectronics
1: ₹1,621.61
502In Stock
New Product

Mfr. Part No.
SCT025W120G3AG

Mouser Part No
511-SCT025W120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package

Learn More

Datasheet

502In Stock

₹1,621.61

₹1,298.19

₹1,122.10

Min.: 1
Mult.: 1

Through Hole

HiP247-3

N-Channel

1 Channel

1.2 kV

56 A

37 mOhms

- 10 V, + 22 V

3 V

73 nC

- 55 C

+ 200 C

388 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package

SCT015W120G3-4AG
STMicroelectronics
1: ₹2,176.82
600Expected 26-10-2026

Mfr. Part No.
SCT015W120G3-4AG

Mouser Part No
511-SCT015W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package

Learn More

Datasheet

600Expected 26-10-2026

₹2,176.82

₹1,781.53

₹1,573.10

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

1.2 kV

129 A

15 mOhms

- 18 V, + 18 V

4.2 V

167 nC

- 55 C

+ 200 C

673 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package

SCT040W120G3-4
STMicroelectronics
1: ₹1,022.38
100On Order
New Product

Mfr. Part No.
SCT040W120G3-4

Mouser Part No
511-SCT040W120G3-4

New Product

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package

Learn More

Datasheet

100On Order

₹1,022.38

₹832.82

₹693.56

₹618.10

₹524.67

Min.: 1
Mult.: 1

Through Hole

HiP247-4

N-Channel

1 Channel

1.2 kV

40 A

54 mOhms

- 10 V, + 22 V

3.1 V

56 nC

- 55 C

+ 200 C

312 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package

SCT019W120G3-4AG
STMicroelectronics
1: ₹1,666.53
Non-Stocked Lead-Time 17 Weeks
New Product

Mfr. Part No.
SCT019W120G3-4AG

Mouser Part No
511-SCT019W120G3-4AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package

Datasheet

Non-Stocked Lead-Time 17 Weeks

₹1,666.53

₹1,334.12

₹1,153.55

Min.: 1
Mult.: 1

Through Hole

HiP247-4

N-Channel

1 Channel

1.2 kV

90 A

26 mOhms

- 10 V, + 22 V

4.2 V

120 nC

- 55 C

+ 200 C

486 W

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

SCT025W120G3-4
STMicroelectronics
600: ₹1,053.82
Non-Stocked Lead-Time 17 Weeks
New Product

Mfr. Part No.
SCT025W120G3-4

Mouser Part No
511-SCT025W120G3-4

New Product

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

Datasheet

Non-Stocked Lead-Time 17 Weeks

₹1,053.82

Min.: 600
Mult.: 600

Through Hole

HiP247-4

N-Channel

1 Channel

1.2 kV

56 A

37 mOhms

-10 V, 22 V

4.2 V

73 nC

- 55 C

+ 200 C

388 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package

SCT070W120G3-4
STMicroelectronics
1: ₹981.95
Non-Stocked Lead-Time 17 Weeks
New Product

Mfr. Part No.
SCT070W120G3-4

Mouser Part No
511-SCT070W120G3-4

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package

Learn More

Datasheet

Non-Stocked Lead-Time 17 Weeks

₹981.95

₹586.66

₹499.51

₹465.37

Min.: 1
Mult.: 1

Through Hole

HiP247-4

N-Channel

1.2 kV

30 A

87 mOhms

- 10 V, + 22 V

3 V

41 nC

- 55 C

+ 200 C

236 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A

SCT070W120G3AG
STMicroelectronics
1: ₹1,090.66
Non-Stocked Lead-Time 17 Weeks
New Product

Mfr. Part No.
SCT070W120G3AG

Mouser Part No
511-SCT070W120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A

Learn More

Datasheet

Non-Stocked Lead-Time 17 Weeks

₹1,090.66

₹887.62

₹740.28

₹659.43

₹559.70

Min.: 1
Mult.: 1

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package

SCTWA40N120G2V
STMicroelectronics
1: ₹1,620.71
Non-Stocked Lead-Time 32 Weeks
NRND

Mfr. Part No.
SCTWA40N120G2V

Mouser Part No
511-SCTWA40N120G2V

NRND

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package

Learn More

Datasheet

Non-Stocked Lead-Time 32 Weeks

₹1,620.71

₹1,234.40

₹1,037.65

Min.: 1
Mult.: 1

Through Hole

HiP247-3

N-Channel

1 Channel

1.2 kV

36 A

100 mOhms

- 10 V, + 22 V

2.45 V

61 nC

- 55 C

+ 200 C

278 W

Enhancement

STMicroelectronics SiC MOSFETs

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