SRAM Semiconductors

Results: 253
Select Image Part # Mfr. Description Datasheet Availability Pricing (INR) Filter the results in the table by unit price based on your quantity. Qty. RoHS
NXP Semiconductors MCF54455VP266
NXP Semiconductors Microprocessors - MPU REDSTRIPE 360 ColdFire Non-Stocked Lead-Time 3 Weeks
Min.: 300
Mult.: 300

Renesas Electronics R9A09G087M08GBA#AC1
Renesas Electronics Microprocessors - MPU RZ/N2H FCBGA669 SINGLE CA55 SEC BULK Non-Stocked Lead-Time 26 Weeks
Min.: 84
Mult.: 84

Renesas Electronics R9A09G087M08GBA#BC1
Renesas Electronics Microprocessors - MPU RZ/N2H FCBGA669 SINGLE CA55 SEC FULL Non-Stocked Lead-Time 26 Weeks
Min.: 672
Mult.: 672

Renesas Electronics R9A09G087M28GBA#AC1
Renesas Electronics Microprocessors - MPU RZ/N2H FCBGA669 DUAL CA55 SEC BULK Non-Stocked Lead-Time 26 Weeks
Min.: 84
Mult.: 84

Renesas Electronics R9A09G087M28GBA#BC1
Renesas Electronics Microprocessors - MPU RZ/N2H FCBGA669 DUAL CA55 SEC FULL Non-Stocked Lead-Time 26 Weeks
Min.: 672
Mult.: 672

Renesas Electronics R9A09G087M48GBA#AC1
Renesas Electronics Microprocessors - MPU RZ/N2H FCBGA669 QUAD CA55 SEC BULK Non-Stocked Lead-Time 26 Weeks
Min.: 84
Mult.: 84

Renesas Electronics R9A09G087M48GBA#BC1
Renesas Electronics Microprocessors - MPU RZ/N2H FCBGA669 QUAD CA55 SEC FULL Non-Stocked Lead-Time 26 Weeks
Min.: 672
Mult.: 672

Terasic Technologies S0567
Terasic Technologies Memory Modules QDRII+ Memory Module for Stratix 10 Board
Non-Stocked
Min.: 1
Mult.: 1
ISSI SRAM 4Mb, Low Power/Power Saver,Async,256K x 16,45ns,2.2v-3.6v, 2 CS 48 Ball mBGA (6x8 mm), RoHS Non-Stocked Lead-Time 12 Weeks
Min.: 480
Mult.: 480

ISSI SRAM 4Mb, Low Power/Power Saver,Async,256K x 16,45ns,2.2v-3.6v, 2 CS 48 Ball mBGA (6x8 mm), RoHS Non-Stocked Lead-Time 12 Weeks
Min.: 2,500
Mult.: 2,500
: 2,500

ISSI SRAM 16Mb,High-Speed,Async,1Mbx16, 10ns, 2.4v-3.6v, 54 Pin TSOP II, RoHS Non-Stocked Lead-Time 12 Weeks
Min.: 1,500
Mult.: 1,500
: 1,500

ISSI SRAM 16Mb,High-Speed,Async,1Mbx16, 8ns, 2.4v-3.6v, 48 Ball mBGA (6x8 mm), RoHS Non-Stocked Lead-Time 12 Weeks
Min.: 2,500
Mult.: 2,500
: 2,500

ISSI SRAM 16Mb,High-Speed,Async,1Mbx16, 8ns, 2.4v-3.6v, 48 Pin TSOP I, RoHS Non-Stocked Lead-Time 12 Weeks
Min.: 1,500
Mult.: 1,500
: 1,500

ISSI SRAM 16Mb,High-Speed,Async,1Mbx16, 10ns, 2.4v-3.6v, 48 Ball mBGA (6x8 mm), RoHS Non-Stocked Lead-Time 12 Weeks
Min.: 2,500
Mult.: 2,500
: 2,500

ISSI SRAM 16Mb,High-Speed,Async,1Mbx16, 8ns, 2.4v-3.6v, 48 Pin TSOP I, RoHS Non-Stocked Lead-Time 12 Weeks
Min.: 96
Mult.: 96

ISSI SRAM 4Mb,High-Speed/Low Power,Async with ECC, 256K x 16, 20ns, 1.65V-2.2V, 48 Ball mBGA (6x8 mm), RoHS Non-Stocked Lead-Time 12 Weeks
Min.: 2,500
Mult.: 2,500
: 2,500

ISSI SRAM 4Mb,High-Speed/Low Power,Async with ECC, 256K x 16, 20ns, 1.65V-2.2V, 48 Ball mBGA (6x8 mm), RoHS Non-Stocked Lead-Time 12 Weeks
Min.: 480
Mult.: 480

ISSI SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 48 Ball mBGA (6x8 mm), RoHS Non-Stocked Lead-Time 12 Weeks
Min.: 2,500
Mult.: 2,500
: 2,500


ISSI SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 44 Pin TSOP II, RoHS Non-Stocked Lead-Time 12 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

ISSI SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 48 Ball mBGA (6x8 mm), RoHS Non-Stocked Lead-Time 12 Weeks
Min.: 480
Mult.: 480


ISSI SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 44 Pin TSOP II, RoHS Non-Stocked Lead-Time 12 Weeks
Min.: 135
Mult.: 135

ISSI SRAM 16Mb, Low Power/Power Saver,Async,1Mb x 16,1.65v-2.2v,48 Ball mBGA (6x8 mm), RoHS Non-Stocked Lead-Time 12 Weeks
Min.: 480
Mult.: 480

ISSI SRAM 16Mb, Low Power/Power Saver,Async,1Mb x 16,1.65v-2.2v,48 Ball mBGA (6x8 mm), RoHS Non-Stocked Lead-Time 12 Weeks
Min.: 2,500
Mult.: 2,500
: 2,500

ISSI SRAM 1Mb, Serial SRAM, 2.7V-3.6V, 45MHz, 8 pin SOIC 150mil, RoHS Non-Stocked Lead-Time 12 Weeks
Min.: 3,000
Mult.: 3,000
: 3,000

ISSI SRAM 4Mb, Serial SRAM, 1.65V-.2.2V, 30MHz, 8 pin SOIC 150mil, RoHS Non-Stocked Lead-Time 12 Weeks
Min.: 3,000
Mult.: 3,000
: 3,000