|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package
- SCTHC250N120G3AG
- STMicroelectronics
-
1:
₹7,155.29
-
33In Stock
-
61On Order
-
New Product
|
Mouser Part No
511-SCTHC250N120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package
|
|
33In Stock
61On Order
|
|
|
₹7,155.29
|
|
|
₹5,671.87
|
|
|
₹4,839.77
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
STPAK-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
239 A
|
8.5 mOhms
|
- 10 V, + 22 V
|
4.4 V
|
304 nC
|
- 55 C
|
+ 200 C
|
994 W
|
|
AEC-Q100
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL35N65G2V
- STMicroelectronics
-
1:
₹1,695.88
-
2,309In Stock
|
Mouser Part No
511-SCTL35N65G2V
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
2,309In Stock
|
|
|
₹1,695.88
|
|
|
₹1,203.89
|
|
|
₹1,047.34
|
|
|
₹991.44
|
|
|
₹991.44
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
1 Channel
|
650 V
|
40 A
|
67 mOhms
|
- 10 V, + 22 V
|
5 V
|
73 nC
|
- 55 C
|
+ 175 C
|
417 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
- SCT019HU120G3AG
- STMicroelectronics
-
1:
₹2,061.14
-
7In Stock
-
600Expected 28-05-2027
-
New Product
|
Mouser Part No
511-SCT019HU120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
|
|
7In Stock
600Expected 28-05-2027
|
|
|
₹2,061.14
|
|
|
₹1,502.99
|
|
|
₹1,256.07
|
|
|
₹1,193.64
|
|
Min.: 1
Mult.: 1
:
600
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q100
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
- SCT020HU120G3AG
- STMicroelectronics
-
1:
₹2,120.78
-
11In Stock
-
1,200On Order
-
New Product
|
Mouser Part No
511-SCT020HU120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
|
|
11In Stock
1,200On Order
Stock:
11 Can Dispatch Immediately
On Order:
600 Expected 05-03-2027
600 Expected 12-03-2027
Factory Lead Time:
36 Weeks
|
|
|
₹2,120.78
|
|
|
₹1,584.06
|
|
|
₹1,337.13
|
|
|
₹1,211.34
|
|
Min.: 1
Mult.: 1
:
600
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
|
555 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
- SCT012W90G3-4AG
- STMicroelectronics
-
1:
₹2,068.60
-
630In Stock
|
Mouser Part No
511-SCT012W90G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
|
|
630In Stock
|
|
|
₹2,068.60
|
|
|
₹1,303.59
|
|
|
₹1,103.25
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
15.8 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
138 nC
|
- 55 C
|
+ 200 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
₹2,489.77
-
580In Stock
|
Mouser Part No
511-SCT015W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
580In Stock
|
|
|
₹2,489.77
|
|
|
₹1,993.12
|
|
|
₹1,723.83
|
|
|
₹1,631.58
|
|
|
Quote
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
15 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
167 nC
|
- 55 C
|
+ 200 C
|
673 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
₹1,740.60
-
448In Stock
|
Mouser Part No
511-SCT018W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
448In Stock
|
|
|
₹1,740.60
|
|
|
₹1,325.02
|
|
|
₹1,104.18
|
|
|
₹983.98
|
|
|
₹919.69
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
77 nC
|
- 55 C
|
+ 200 C
|
398 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
₹1,885.03
-
311In Stock
-
600On Order
|
Mouser Part No
511-SCT020W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
311In Stock
600On Order
|
|
|
₹1,885.03
|
|
|
₹1,178.73
|
|
|
₹1,120.96
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
Hip247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
+ 200 C
|
541 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
₹1,765.76
-
298In Stock
-
600Expected 29-01-2027
|
Mouser Part No
511-SCT025W120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
298In Stock
600Expected 29-01-2027
|
|
|
₹1,765.76
|
|
|
₹1,098.59
|
|
|
₹1,030.57
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
₹1,268.18
-
680In Stock
|
Mouser Part No
511-SCT027H65G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
|
|
680In Stock
|
|
|
₹1,268.18
|
|
|
₹885.21
|
|
|
₹719.35
|
|
|
₹671.83
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
60 A
|
39.3 mOhms
|
- 10 V, + 22 V
|
3 V
|
48.6 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
₹1,543.06
-
246In Stock
|
Mouser Part No
511-SCT027W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
246In Stock
|
|
|
₹1,543.06
|
|
|
₹1,177.80
|
|
|
₹818.12
|
|
|
₹696.05
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
60 A
|
29 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
51 nC
|
- 55 C
|
+ 200 C
|
313 W
|
Enhancement
|
AEC-Q100
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
₹1,311.04
-
258In Stock
-
600Expected 19-02-2027
|
Mouser Part No
511-SCT040W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
258In Stock
600Expected 19-02-2027
|
|
|
₹1,311.04
|
|
|
₹916.89
|
|
|
₹694.19
|
|
|
₹613.12
|
|
|
₹612.19
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q100
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
₹1,294.27
-
345In Stock
|
Mouser Part No
511-SCT040W120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
345In Stock
|
|
|
₹1,294.27
|
|
|
₹909.44
|
|
|
₹694.19
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
₹1,075.30
-
487In Stock
|
Mouser Part No
511-SCT040W65G3-4
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
487In Stock
|
|
|
₹1,075.30
|
|
|
₹645.74
|
|
|
₹546.97
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
₹1,250.48
-
481In Stock
|
Mouser Part No
511-SCT040W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
481In Stock
|
|
|
₹1,250.48
|
|
|
₹905.71
|
|
|
₹775.26
|
|
|
₹668.10
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
- SCT055TO65G3
- STMicroelectronics
-
1:
₹852.60
-
1,414In Stock
|
Mouser Part No
511-SCT055TO65G3
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
|
|
1,414In Stock
|
|
|
₹852.60
|
|
|
₹582.38
|
|
|
₹480.81
|
|
|
₹437.01
|
|
|
₹399.74
|
|
|
₹399.74
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
3 V
|
31 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
₹2,050.89
-
11In Stock
-
1,000Expected 12-03-2027
|
Mouser Part No
511-SCT012H90G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
11In Stock
1,000Expected 12-03-2027
|
|
|
₹2,050.89
|
|
|
₹1,471.31
|
|
|
₹1,336.20
|
|
|
₹1,335.27
|
|
|
₹1,247.68
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
12 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
138 nC
|
- 55 C
|
+ 175 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
₹1,543.99
-
22In Stock
-
1,000Expected 12-02-2027
|
Mouser Part No
511-SCT018H65G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
22In Stock
1,000Expected 12-02-2027
|
|
|
₹1,543.99
|
|
|
₹1,089.27
|
|
|
₹928.07
|
|
|
₹866.57
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
79.4 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
₹1,966.10
-
46In Stock
-
1,200Expected 19-02-2027
|
Mouser Part No
511-SCT025W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
46In Stock
1,200Expected 19-02-2027
|
|
|
₹1,966.10
|
|
|
₹1,356.70
|
|
|
₹1,238.36
|
|
|
₹1,138.66
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
- SCT040HU65G3AG
- STMicroelectronics
-
1:
₹1,270.04
-
21In Stock
-
600On Order
|
Mouser Part No
511-SCT040HU65G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
|
|
21In Stock
600On Order
|
|
|
₹1,270.04
|
|
|
₹886.14
|
|
|
₹720.28
|
|
|
₹672.76
|
|
Min.: 1
Mult.: 1
:
600
|
|
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
650 V
|
7 A
|
40 mOhms
|
- 30 V, + 30 V
|
5 V
|
36 nC
|
- 55 C
|
+ 150 C
|
266 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
₹1,406.09
-
20In Stock
-
1,200Expected 29-01-2027
|
Mouser Part No
511-SCT070W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
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20In Stock
1,200Expected 29-01-2027
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₹1,406.09
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₹1,054.80
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₹819.98
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₹724.01
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Min.: 1
Mult.: 1
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Through Hole
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HiP-247-4
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N-Channel
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1 Channel
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1.2 kV
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30 A
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87 mOhms
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- 18 V, + 18 V
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4.2 V
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41 nC
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- 55 C
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+ 200 C
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236 W
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Enhancement
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AEC-Q101
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SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
- SCT040H65G3AG
- STMicroelectronics
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1:
₹1,128.41
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769In Stock
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Mouser Part No
511-SCT040H65G3AG
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STMicroelectronics
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SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
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769In Stock
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₹1,128.41
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₹782.71
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₹617.78
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₹584.24
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Min.: 1
Mult.: 1
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1,000
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SMD/SMT
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N-Channel
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1 Channel
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650 V
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30 A
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40 mOhms
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- 10 V, + 22 V
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4.2 V
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39.5 nC
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- 55 C
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+ 175 C
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221 W
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Enhancement
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AEC-Q101
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SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
- SCT1000N170
- STMicroelectronics
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1:
₹886.14
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459In Stock
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Mouser Part No
511-SCT1000N170
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STMicroelectronics
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SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
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459In Stock
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₹886.14
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₹605.67
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₹504.10
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₹374.58
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₹366.20
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Min.: 1
Mult.: 1
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Through Hole
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HiP-247-3
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N-Channel
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1 Channel
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1.7 kV
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6 A
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1 Ohms
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- 10 V, + 25 V
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2.1 V
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14 nC
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- 55 C
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+ 200 C
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120 W
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Enhancement
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SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
- SCT20N120AG
- STMicroelectronics
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1:
₹1,594.31
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338In Stock
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Mouser Part No
511-SCT20N120AG
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STMicroelectronics
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SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
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338In Stock
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₹1,594.31
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₹1,130.27
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₹841.42
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₹754.76
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Quote
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Quote
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Min.: 1
Mult.: 1
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Through Hole
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N-Channel
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1 Channel
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1.2 kV
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20 A
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239 mOhms
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- 20 V, + 20 V
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3.5 V
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45 nC
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- 55 C
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+ 200 C
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175 W
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Enhancement
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AEC-Q101
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SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL90N65G2V
- STMicroelectronics
-
1:
₹2,907.22
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1,301In Stock
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Mouser Part No
511-SCTL90N65G2V
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STMicroelectronics
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SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
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1,301In Stock
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₹2,907.22
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₹2,129.16
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₹2,078.85
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₹2,077.91
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₹1,968.89
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₹1,968.89
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Min.: 1
Mult.: 1
:
3,000
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SMD/SMT
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PowerFLAT-5
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N-Channel
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1 Channel
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650 V
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40 A
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18 mOhms
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- 10 V, + 22 V
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5 V
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157 nC
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- 55 C
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+ 175 C
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935 W
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Enhancement
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