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NTMFS3D2N10MDT1G

Name: onsemi NTMFS3D2N10MDT1G
Brand: onsemi
SKU: 863-NTMFS3D2N10MDT1G
Price: 488.21 INR
Availability: InStock

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Mouser No:

863-NTMFS3D2N10MDT1G

Mfr. No:

NTMFS3D2N10MDT1G

Mfr.:

onsemi

Description:

MOSFETs PTNG 100V LOW Q3.2MOHM N-FET HE SO8FL

Datasheet:

NTMFS3D2N10MDT1G Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	142 A
Rds On - Drain-Source Resistance:	3.5 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	48 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	155 W
Channel Mode:	Enhancement
Tradename:	PowerTrench
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Product Type:	MOSFETs
Series:	NTMFS3D2N10MD
Factory Pack Quantity:	1500
Subcategory:	Transistors

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Filter Document:

Datasheet

NTMFS3D2N10MDT1G Datasheet (PDF)

PCN

Product Change Notification 2026-7-9 (PDF)

Material Composition Disclosure

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

PowerTrench Technology

onsemi PowerTrench Technology represents the advancement of PowerTrench technology, especially from T6 to T10, which signifies a breakthrough in power electronics. Developed by onsemi, PowerTrench MOSFETs offer enhanced efficiency and performance across various applications. The shift from T6/T8 to T10 significantly improves on-resistance and switching performance, which is crucial for energy-efficient designs.

NTMFS3D2N10MD N-Channel MOSFET

onsemi NTMFS3D2N10MD N-Channel MOSFET is designed using an advanced PowerTrench^® process that incorporates Shielded Gate technology. This process has been optimized to minimize the on-state resistance R_DS(on) to minimize conduction losses and yet maintain superior switching performance. The NTMFS3D2N10MD MOSFET features low Q_G and capacitance to minimize driver losses, low Q_RR, soft recovery body diode, and low Q_OSS to improve light-load efficiency. Typical applications include primary switches in isolated DC-DC converters, AC-DC adapters, synchronous rectification in DC-DC and AC-DC, BLDC motors, load switches, and solar inverters.

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In Stock: 76

Stock:: 76

Can Dispatch Immediately

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On Order:: 1,500

Expected 09-07-2027

3,000

Expected 23-07-2027
Factory Lead Time:: 52

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1500)

Cut Tape

MouseReel™ (+₹475.00)

Pricing (INR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	₹488.21	₹488.21
	₹291.40	₹2,914.00
	₹234.07	₹23,407.00
	₹208.28	₹1,04,140.00
	₹179.62	₹1,79,620.00
Full Reel (Order in multiples of 1500)
	₹179.62	₹2,69,430.00

† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

NTMFS3D2N10MDT1G

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Mfr.: onsemi

Description: MOSFETs PTNG 100V LOW Q3.2MOHM N-FET HE SO8FL

Specifications

Documents (2)

Datasheet

PCN

Environmental Documents

Product & Trade Compliance

More Information

PowerTrench Technology

NTMFS3D2N10MD N-Channel MOSFET

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Mfr.:

onsemi

Description:

MOSFETs PTNG 100V LOW Q3.2MOHM N-FET HE SO8FL

FEATURED PRODUCTS

ONSEMI