TK095N65Z5,S1F

Toshiba
757-TK095N65Z5S1F
TK095N65Z5,S1F

Mfr.:

Description:
MOSFETs POWER MOSFET TRANSISTOR TO-247 PD=230W F=1MHZ

Datasheet:
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Learn more about Toshiba TK095N65Z5,S1F

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
29 A
95 mOhms
- 30 V, 30 V
4.5 V
50 nC
+ 150 C
230 W
Enhancement
Tube
Brand: Toshiba
Configuration: Single
Fall Time: 4 ns
Product Type: MOSFETs
Rise Time: 40 ns
Factory Pack Quantity: 30
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 95 ns
Typical Turn-On Delay Time: 75 ns
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Attributes selected: 0

Compliance Codes
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

DTMOSVI MOSFETs

Toshiba DTMOSVI MOSFETs offer a low drain-source on-resistance of 0.033Ω (typical), a drain-source voltage of 650V, and a drain current of 57A. The DTMOSVI MOSFETs offer high-speed switching properties with lower capacitance. These MOSFETs are ideal for use in switching power supply applications.

TK095N65Z5 Silicon N-Channel (DTMOSVI) MOSFET

Toshiba TK095N65Z5 Silicon N-Channel (DTMOSVI) MOSFET is a 650V, 95mΩ high-speed MOSFET in a TO-247 package. Designed for use in switching voltage regulator applications, TK095N65Z5 offers a fast recovery time (115ns typical) and a low drain-source on-resistance (0.079Ω typical). This MOSFET provides high-speed switching properties with a low capacitance.

In Stock: 30

Stock:
30 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹692.33 ₹692.33
₹423.97 ₹4,239.70

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