UF4C/SC 1200V Gen 4 SiC FETs

Qorvo UF4C/SC 1200V Gen 4 SiC FETs are a high-performance series delivering industry-best Figures of Merit. The UF4C/SC 1200V Gen 4 SiC FETs are ideal for mainstream 800V bus architectures in onboard chargers for EVs, industrial battery chargers, industrial power supplies, renewables, energy storage, welding machines, UPS and induction heating applications. Available in 23mΩ to 70mΩ options, the Gen 4 series is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode optimised Si-MOSFET to produce a standard gate drive SiC device. This feature allows for flexible design without changing gate drive voltage, easily replacing Si IGBTs, Si FETs, SiC FETs or Si super-junction devices.

Results: 11
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Description Datasheet Availability Pricing (INR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
onsemi SiC MOSFETs 1200V/70MOSICFETG4TO247-4
Datasheet
388In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 27.5 A 91 mOhms - 20 V, + 20 V 6 V - 55 C + 175 C 217 W SiC FET
onsemi SiC MOSFETs 1200V/23MOSICFETG4TO24
Datasheet
673In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 53 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement SiC FET
onsemi SiC MOSFETs 1200V/53MOSICFETG4TO247-4
Datasheet
747In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 34 A 67 mOhms - 20 V, + 20 V 6 V - 55 C + 175 C 263 W SiC FET
onsemi SiC MOSFETs 1200V/53MOSICFETG4TO263-7
Datasheet
614In Stock
Min.: 1
Mult.: 1
: 800

SMD/SMT D2PAK-7 1 Channel 1.2 kV 34 A 53 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 250 W Enhancement SiC FET
onsemi SiC MOSFETs 1200V/70MOSICFETG4TO263-7
Datasheet
513In Stock
Min.: 1
Mult.: 1
: 800

SMD/SMT D2PAK-7 1 Channel 1.2 kV 25.7 A 72 mOhms - 20 V, + 20 V 6 V - 55 C + 175 C 183 W Enhancement SiC FET
onsemi SiC MOSFETs 1200V/30MOSICFETG4TO26
Datasheet
11In Stock
800Expected 17-09-2026
Min.: 1
Mult.: 1
: 800

SMD/SMT D2PAK-7 1 Channel 1.2 kV 56 A 39 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 341 W Enhancement SiC FET
onsemi SiC MOSFETs 1200V/53MOSICFETG4TO247-3
Datasheet
282In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 1 Channel 1.2 kV 34 A 67 mOhms - 20 V, + 20 V 6 V - 55 C + 175 C 263 W SiC FET
onsemi SiC MOSFETs 1200V/70MOSICFETG4TO247-3
Datasheet
272In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 1 Channel 1.2 kV 27.5 A 91 mOhms - 20 V, + 20 V 6 V - 55 C + 175 C 217 W SiC FET
onsemi SiC MOSFETs UF4C120053B7S
Datasheet
200In Stock
Min.: 1
Mult.: 1

SMD/SMT D2PAK-7 1 Channel 1.2 kV 34 A 53 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 250 W Enhancement SiC FET
onsemi SiC MOSFETs UF4C120070B7S
Datasheet
200In Stock
Min.: 1
Mult.: 1

SMD/SMT D2PAK-7 1 Channel 1.2 kV 25.7 A 72 mOhms - 20 V, + 20 V 6 V - 55 C + 175 C 183 W Enhancement SiC FET
onsemi SiC MOSFETs 1200V/30MOSICFETG4TO24
Datasheet
Non-Stocked Lead-Time 31 Weeks
Min.: 600
Mult.: 600

Through Hole TO-247-4 1 Channel 1.2 kV 53 A 39 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 341 W Enhancement SiC FET