EPC2304

Name: EPC EPC2304
Brand: EPC
SKU: 65-EPC2304
Price: 864.64 INR
Availability: InStock

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Mouser No:

65-EPC2304

Mfr. No:

EPC2304

Mfr.:

EPC

Description:

GaN FETs EPC eGaN FET, 200 V, 5 milliohm at 5 V, 3 mm x 5 mm FCQFN

Lifecycle:

New At Mouser

Datasheet:

EPC2304 Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	EPC
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	FCQFN-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	133 A
Rds On - Drain-Source Resistance:	5 mOhms
Vgs - Gate-Source Voltage:	- 4 V, 6 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	21 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Channel Mode:	Enhancement
Tradename:	eGaN FET
Technology:	GaN
Brand:	EPC
Configuration:	Single
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Product:	Power Transistor
Product Type:	GaN FETs
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	31.500 mg

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Datasheet

EPC2304 Datasheet (PDF)

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

EPC2304 Enhancement-Mode GaN Power Transistor

Efficient Power Conversion (EPC) EPC2304 Enhancement-Mode Gallium Nitride (GaN) Power Transistor is designed to handle tasks where ultra-high switching frequency and low on-time are advantageous, as well as those where on-state losses dominate. This eGaN^® FET offers exceptionally high electron mobility and low temperature coefficient, allowing low drain-source on resistance R_DS(on) of 3.5mΩ typical and 5mΩ maximum. The EPC2304's lateral device structure and majority carrier diode provide exceptionally low total gate charge (Q_G) and zero reverse recovery (Q_RR) losses. This 200V_DS power transistor from EPC comes in an ultra-small 3mm x 5mm QFN package for higher power density.

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EPC2304 Enhancement-Mode GaN Power Transistor

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In Stock: 34

Stock:: 34

Can Dispatch Immediately

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On Order:: 9,000

Expected 21-12-2027

15,000

Expected 20-01-2028
Factory Lead Time:: 69

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹864.64	₹864.64
	₹471.97	₹4,719.70
	₹434.71	₹43,471.00
	₹431.84	₹2,15,920.00
	₹395.54	₹3,95,540.00
Full Reel (Order in multiples of 3000)
	₹351.59	₹10,54,770.00

EPC2304

Mfr.: EPC

Description: GaN FETs EPC eGaN FET, 200 V, 5 milliohm at 5 V, 3 mm x 5 mm FCQFN

Specifications

Documents (1)

Datasheet

Product & Trade Compliance

More Information

EPC2304 Enhancement-Mode GaN Power Transistor

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Mfr.:

EPC

Description:

GaN FETs EPC eGaN FET, 200 V, 5 milliohm at 5 V, 3 mm x 5 mm FCQFN

FEATURED PRODUCTS

EPC