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SiSS52DN & SiSS54DN N-Ch TrenchFET® Gen V MOSFETs
Vishay / Siliconix SiSS52DN and SiSS54DN N-Channel TrenchFET Gen V Power MOSFETs enable higher power density with very low RDS(on). These power MOSFETs offer 30V VDS and very low RDS x Qg Figure-of-Merit (FOM). The Vishay / Siliconix SiSS52DN N-Channel MOSFET typically features 162A ID and 19.9nC Qg. Meanwhile, the SiSS54DN N-Channel MOSFET typically features 185.6A ID and 21nC Qg. This 100% Rg and Unclamped Inductive Switching (UIS) tested MOSFET comes in a thermally enhanced compact PowerPAK® 1212-8S package with a single configuration. Typical applications include DC/DC converters, Point-of-Loads (POLs), synchronous rectification, power and load switches, and battery management.
