QPA2935TR7

Name: Qorvo QPA2935TR7
Brand: Qorvo
SKU: 772-QPA2935TR7
Price: 5817.23 INR
Availability: OutOfStock

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Mouser No:

772-QPA2935TR7

Mfr. No:

QPA2935TR7

Mfr.:

Qorvo

Description:

RF Amplifier 2.9-3.5 GHz, 2W S-band MMIC, OVM

Datasheet:

QPA2935TR7 Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	RF Amplifier
Delivery Restrictions:	This item may require additional fees and documentation. Customs delays may also occur.
RoHS:
Operating Frequency:	2.7 GHz to 3.5 GHz
Operating Supply Voltage:	25 V
Operating Supply Current:	29 mA
Gain:	28.4 dB
Type:	Driver Amplifiers
Mounting Style:	SMD/SMT
Technology:	GaN SiC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Series:	QPA2935
Packaging:	Reel
Brand:	Qorvo
Development Kit:	QPA2935EVB
Input Return Loss:	15 dB
Moisture Sensitive:	Yes
Number of Channels:	1 Channel
Pd - Power Dissipation:	11.5 W
Product Type:	RF Amplifier
Factory Pack Quantity:	250
Subcategory:	Wireless & RF Integrated Circuits
Part # Aliases:	QPA2935

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Datasheet

QPA2935TR7 Datasheet (PDF)

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Compliance Codes

USHTS:: 8542330001
TARIC:: 8542330000
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

QPA2935 2W S-Band GaN Driver Amplifier

Qorvo QPA2935 2W S-Band GaN Driver Amplifier operates from 2.7GHz to 3.5GHz and delivers 33dBm of saturated output power and 18dB of large-signal gain while achieving greater than 52% power-added efficiency. The QPA2935 is fabricated on the QGaN25 0.25µm GaN (Gallium Nitride) on SiC (Silicon Carbide) process and is matched to 50Ω with integrated DC blocking caps on both I/O ports.