1200V E4MS Discrete SiC MOSFETs

Wolfspeed 1200V E4MS Discrete Silicon Carbide (SiC) MOSFETs deliver unparalleled performance in onboard automotive applications. The E4MS family utilizes a fast and soft body diode that enables fast switching with minimal overshoot and ringing, expanding the usable design space for engineers to tune and optimize the performance in the application. The E4MS family provides improved Eon, ERR, and Eoff losses compared to the E3M family of devices, while maintaining a low RDS(on) temperature coefficient. This balanced approach provides maximum performance and efficiency across a wide range of onboard topologies.

Results: 12
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Description Datasheet Availability Pricing (INR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Wolfspeed SiC MOSFETs SiC, MOSFET, 47mohm, 1200V, TO-247-4, Automotive, Gen4
Datasheet
445In Stock
Min.: 1
Mult.: 1

SMD/SMT TO-247-4 1 Channel 1.2 kV 46 A 61 mOhms - 10 V, 23 V 3.9 V 68 nC - 55 C + 175 C 186 W Enhancement AEC-Q101
Wolfspeed SiC MOSFETs SiC, MOSFET,25m,1200V, TO-263-7 XL T&R , Automotive, Gen4
Datasheet
Non-Stocked
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7XL 1 Channel 1.2 kV 82 A 33 mOhms - 10 V, + 23 V 2.6 V 125 nC - 55 C + 175 C 330 W Enhancement AEC-Q101
Wolfspeed SiC MOSFETs SiC, MOSFET, 25m, 1200V, TO-247-4, Automotive, Gen4
Datasheet
Non-Stocked
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 77 A 33 mOhms - 10 V, + 23 V 2.6 V 125 nC - 55 C + 175 C 281 W Enhancement AEC-Q101
Wolfspeed SiC MOSFETs SiC, MOSFET,25m,1200V, TSC (U2) , Automotive, Gen4
Datasheet
Non-Stocked Lead-Time 22 Weeks
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7XL 1 Channel 1.2 kV 82 A 33 mOhms - 10 V, + 23 V 2.6 V 125 nC - 55 C + 175 C 350 W Enhancement AEC-Q101
Wolfspeed SiC MOSFETs SiC, MOSFET,36m,1200V, TO-263-7 XL T&R , Automotive, Gen4
Datasheet
Non-Stocked
Min.: 800
Mult.: 800
: 800
SMD/SMT TO-263-7XL 1 Channel 1.2 kV 60 A 47 mOhms - 10 V, + 23 V 2.6 V 88 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
Wolfspeed SiC MOSFETs SiC, MOSFET, 36m, 1200V, TO-247-4, Automotive, Gen4
Datasheet
Non-Stocked Lead-Time 22 Weeks
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 55 A 47 mOhms - 10 V, + 23 V 2.6 V 88 nC - 55 C + 175 C 211 W Enhancement AEC-Q101
Wolfspeed SiC MOSFETs SiC, MOSFET,36m,1200V, TSC (U2) , Automotive, Gen4
Datasheet
Non-Stocked
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7XL 1 Channel 1.2 kV 60 A 47 mOhms - 10 V, + 23 V 2.6 V 88 nC - 55 C + 175 C 274 W Enhancement AEC-Q101
Wolfspeed SiC MOSFETs SiC, MOSFET, 47mohm, 1200V, TO-263-7 XL T&R, Automotive, Gen4
Datasheet
Non-Stocked
Min.: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 1 Channel 1.2 kV 46 A 61 mOhms - 10 V, 23 V 3.9 V 68 nC - 55 C + 175 C 203 W Enhancement AEC-Q101
Wolfspeed SiC MOSFETs SiC, MOSFET, 47mohm, 1200V, TSC (U2), Automotive, Gen4
Datasheet
Non-Stocked
Min.: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 1 Channel 1.2 kV 48 A 61 mOhms - 10 V, 23 V 3.9 V 68 nC - 55 C + 175 C 217 W Enhancement AEC-Q101
Wolfspeed SiC MOSFETs SiC, MOSFET, 65mohm, 1200V, TO-263-7 XL T&R, Automotive, Gen4
Datasheet
Non-Stocked Lead-Time 22 Weeks
Min.: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 1 Channel 1.2 kV 36 A 85 mOhms - 10 V, 23 V 3.9 V 51 nC - 55 C + 175 C 163 W Enhancement AEC-Q101
Wolfspeed SiC MOSFETs SiC, MOSFET, 65mohm, 1200V, TO-247-4, Automotive, Gen4
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 34 A 85 mOhms - 10 V, 23 V 3.9 V 51 nC - 55 C + 175 C 140 W Enhancement AEC-Q101
Wolfspeed SiC MOSFETs SiC, MOSFET, 65mohm, 1200V, TSC (U2), Automotive, Gen4
Datasheet
Non-Stocked
Min.: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 1 Channel 1.2 kV 36 A 85 mOhms - 10 V, 23 V 3.9 V 51 nC - 55 C + 175 C 166 W Enhancement AEC-Q101