Guerrilla RF GRF0090 GaN HEMT Power Transistor
Guerrilla RF GRF0090 GaN HEMT Power Transistor is a 110W (P3dB) unmatched discrete GaN-on-SiC HEMT, which operates from DC to 3.7GHz on a 50V supply rail. This power transistor operates at 10dB saturated gain, 56.3% saturated drain efficiency, and 49.7dBm saturated output power with a reference of 50V/109mA/3.5GHz. The GRF0090 transistor features a 55V operating voltage, 8V to 2V gate-to-source voltage, 150V drain-to-source voltage, and a -40°C to +105°C operating temperature range. This power transistor is 100% DC and RF production tested, lead-free, and RoHS-compliant. The GRF0090 transistor is housed in an industry-standard 6mm x 3mm surface-mount DFN-14 plastic package. Typical applications include cellular infrastructure, radar, communications, and test instrumentation.
Features
- DC to 3.7GHz operating frequency range
- 28V and 50V operating drain voltage
- 110W (P3dB) maximum output power
- 100% DC and RF production tested
- Compact 6mm x 3mm size and DFN-14 package
- 55V operating voltage
- -40°C to +105°C operating temperature range
- 50V/109mA/3.5GHz reference:
- 10dB saturated gain
- 56.3% saturated drain efficiency
- 49.7dBm saturated output power
Applications
- Cellular infrastructure
- Radar
- Communications
- Test instrumentation
Block Diagram
Typical Operating Curves: Maximum Available Gain and Stability vs. Frequency
