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Texas Instruments TMCS1170 Hall-Effect Current Sensors

Texas Instruments TMCS1170 Hall-Effect Current Sensors feature galvanically isolated AC and DC measurement in a compact QFN package. TI implements differential Hall sensors, integrated shielding, and coreless construction to reject interference from external magnetic fields. An internal low-resistance conductor enables high continuous current measurement while minimizing power loss and thermal dissipation.

The Texas Instruments TMCS1170 Sensors deliver a proportional analog output with fixed sensitivity, built-in drift compensation, and integrated overcurrent detection. Multiple sensitivity and reference-voltage options support bidirectional and unidirectional current measurements without system-level calibration. The small solution size and high ambient-field immunity make the sensors ideal for robotics, motor control, solar energy systems, power supplies, and overcurrent protection.

Features

  • Galvanically isolated Hall-effect current sensing
  • Bidirectional and unidirectional current-sensing options
  • Coreless construction without external magnetic concentrators
  • Differential Hall sensors for external magnetic-field rejection
  • Integrated shielding for common-mode rejection and transient immunity
  • Built-in drift compensation for measurement stability over temperature and lifetime
  • Fixed sensitivity to eliminate ratiometry errors and improve supply-noise rejection
  • Integrated overcurrent detection with dedicated fault output
  • Low-resistance internal conductor for reduced power loss
  • High continuous current capability in a compact footprint
  • Multiple sensitivity and reference-voltage configurations
  • No system-level calibration required

Applications

  • Robotics
  • Motor control
  • Solar energy
  • Power supplies
  • Overcurrent protection

Specifications

  • Functional isolation voltage of ±100V
  • Continuous current capability of 60ARMS
  • Internal conductor resistance of 0.6mΩ
  • Signal bandwidth of 285kHz
  • Output propagation delay of 300ns
  • Overcurrent detection response time of 1.3µs
  • Supply voltage range of 3V to 5.5V
  • Typical sensitivity error of ±1%
  • Maximum sensitivity error of ±2.85% from 25°C to +125°C
  • Maximum offset error of ±15mV from 25°C to +125°C
  • Maximum lifetime offset drift of ±20mV
  • Lifetime sensitivity shift of less than 3%
  • Sensitivity range of 26.4mV/A to 200mV/A
  • Operating temperature options
    • -40°C to +125°C for Grade 1 devices
    • -40°C to +150°C for Grade 0 devices
  • Device configurations
    • Bidirectional 1.65V-reference options
      • 132mV/A sensitivity with ±10A linear range
      • 90mV/A sensitivity with ±14.7A linear range
      • 44mV/A sensitivity with ±30A linear range
      • 26.4mV/A sensitivity with ±50A linear range
    • Bidirectional 2.5V-reference options
      • 200mV/A sensitivity with ±10A linear range
      • 100mV/A sensitivity with ±20A linear range
      • 66mV/A sensitivity with ±30A linear range
      • 40mV/A sensitivity with ±50A linear range
    • Unidirectional 0.5V-reference option
      • 80mV/A sensitivity with 50A linear range
  • 12-pin VQFN package
  • Package dimensions of 3mm x 3mm

Additional Resources

Typical Application

Application Circuit Diagram - Texas Instruments TMCS1170 Hall-Effect Current Sensors

Functional Block Diagram

Block Diagram - Texas Instruments TMCS1170 Hall-Effect Current Sensors
Published: 2026-09-14 | Updated: 2026-09-18