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Infineon Technologies CoolGan™ 600V e-Mode Power Transistors

Infineon Technologies CoolGan™ 600V Enhancement Mode (e-Mode) Power Transistors enable simpler half-bridge topologies with fast turn-on and turn-off speeds. The rugged and reliable transistors are available in high-performing SMD packages to fully exploit the benefits of GaN. The transistors feature high efficiency, high power density, higher operating frequency capability, and reduced EMI. Applications include telecom / datacom / server SMPS, wireless charging, chargers, and adapters.

Features

  • Enhancement mode transistor, normally OFF switch
  • Ultra-fast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • Improves system efficiency
  • Improves power density
  • Enables higher operating frequencies
  • System cost reduction savings
  • Reduces EMI
  • Available packages
    • DSO-20-85 or DSO-20-87
    • LSON-8-1
  • Qualified for industrial applications according to JEDEC standards (JESD47 and JESD22)
  • Lead-free, Halogen-free, and RoHS compliant

Applications

  • Industrial
  • Telecom
  • Data center SMPS based on the half-bridge topology

Specifications

  • 600V maximum continuous drain-source voltage
  • 800V minimum drain-source destructive breakdown voltage
  • Pulsed drain-source voltage
    • 750V maximum at +25°C
    • 650V maximum at +125°C
  • 750V maximum pulsed switching surge voltage
  • 14A to 31A maximum drain-source continuous current range
  • Pulsed drain-source current
    • 60A maximum at +25°C
    • 35A maximum at +125°C
  • 20mA maximum continuous gate current
  • 2000mA maximum pulsed gate current
  • -10V minimum continuous gate-source voltage
  • -25V minimum pulsed gate-source voltage
  • 114W or 125W maximum power dissipation
  • 200V/ns maximum drain-source voltage slew rate
  • -55°C to +150°C operating temperature range

Additional Resources

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Published: 2023-02-13 | Updated: 2023-09-08