Infineon Technologies HybridPACK™ HD CoolSiC™ MOSFET Module

Infineon Technologies FF01MR14A60MA2XT HybridPACK™ HD CoolSiC™ MOSFET Module is a 1400V half-bridge power module for electric commercial vehicle drivetrains. The device integrates high-current CoolSiC MOSFET technology with low on-resistance, low switching losses, and a low-inductance design. Infineon implements the .XT interconnection technology to support high power-cycling capability and long service life in demanding heavy-duty applications.

The Infineon FF01MR14A60MA2XT Module combines a direct-cooled PinFin baseplate and temperature sensor for thermal management and system monitoring. High creepage and clearance distances, strong vibration resistance, laser-weldable power terminals, and PressFIT auxiliary contacts support robust inverter integration. The HybridPACK HD platform is designed for heavy-duty electric commercial vehicles and future high-voltage battery architectures.

Features

  • CoolSiC MOSFET technology with .XT interconnection
  • Half-bridge power module configuration
  • Low on-resistance for reduced conduction losses
  • Low switching losses for efficient power conversion
  • Low-inductance design for high-performance switching
  • High power-cycling capability
  • High creepage and clearance distances
  • High vibration resistance
  • Direct-cooled PinFin baseplate
  • Integrated temperature sensor
  • Power terminals suitable for laser welding
  • Auxiliary terminals with PressFIT contact technology
  • AQG 324 qualification
  • Vibration resistance qualified according to ISO 16750-3
  • IPC-9797 qualification
  • RoHS-compliant

Specifications

  • Drain-source voltage of 1400V
  • Implemented drain current of 850A
  • Continuous DC drain current of 785A at 175°C junction temperature and 65°C fluid temperature
  • Repetitive peak drain current of 1700A
  • Operating junction temperature up to +175°C
  • Recommended on-state gate voltage range of 15V to 18V
  • Recommended off-state gate voltage range of -5V to -3V
  • Drain-source on-resistance at 850A and 15V gate voltage
    • 1.16mΩ typical at 25°C junction temperature
    • 1.58mΩ maximum at 25°C junction temperature
    • 1.77mΩ typical at 125°C junction temperature
    • 2.26mΩ typical at 175°C junction temperature
  • Drain-source on-resistance at 850A and 18V gate voltage
    • 1.36mΩ typical at 25°C junction temperature
    • 1.65mΩ typical at 125°C junction temperature
    • 2.15mΩ typical at 175°C junction temperature
  • Total gate charge of 2.2µC
  • Internal gate resistance of 0.17Ω
  • Typical module stray inductance of 6.5nH
  • Module lead resistance of 0.4mΩ per switch
  • Isolation test voltage of 3.4kVRMS for 1 minute
  • Minimum creepage distances
    • 16.6mm from terminal to baseplate
    • 17.6mm from terminal to terminal
  • Minimum clearances
    • 14.0mm from terminal to baseplate
    • 13.2mm from terminal to terminal
  • Comparative tracking index of 175
  • Maximum cooling-circuit pressure of 3bar
  • Storage temperature range of -40°C to +125°C
  • Maximum baseplate operating temperature of +150°C
  • Module weight of 435g
  • HybridPACK HD package

Typical Application

Application Circuit Diagram - Infineon Technologies HybridPACK™ HD CoolSiC™ MOSFET Module

Dimensions mm

Mechanical Drawing - Infineon Technologies HybridPACK™ HD CoolSiC™ MOSFET Module
Published: 2026-09-21 | Updated: 2026-10-02