Infineon Technologies Silicon-on-Insulator (SOI) Gate Driver ICs

Infineon Silicon-on-Insulator (SOI) Gate Driver ICs are level-shift high voltage gate driver ICs for IGBTs and MOSFETs. The SOI technology is a high-voltage, level-shift technology providing unique, measurable, and best-in-class advantages. These include integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that are causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.

These Silicon-on-Insulator Gate Drives include the 2ED218x (high current 650V, 2.5A) and 2ED210x (low current 650V, 0.7A) half-bridge SOI gate drivers. Both devices include two package options: DSO-8 and DSO-14.

Features

Main benefits of Infineon SOI technology
- Immunity to negative transient voltage prevents erratic operation and latch-up while improving reliability
- Low ohmic integrated bootstrap diodes (BSD) have the lowest reverse recovery and forward losses
- Increased efficiency, faster switching, lower temperature, and Increased reliability
- Minimum level-shift losses improve driver efficiency and allow flexible housing designs
- Integrated input filters enhance noise immunity
- 200V, 600V, 650V, and 1200V withstand voltages for each voltage design class providing an operating margin