IXYS Gate Drivers for N-Channel MOSFETs & IGBTs
IXYS Gate Drivers for N-Channel MOSFETs and IGBTs include high-voltage high-speed gate drivers and three-phase gate driver ICs. These devices are designed to drive two N-channel MOSFETs or IGBTs in a half-bridge configuration or high-side / low-side configuration. The high-voltage technology enables the high side to switch to 600V in a bootstrap operation. The drivers provide feature high pulse current buffers designed for minimum driver cross conduction. Other features include logic inputs with 3.3V capability, Schmitt triggered logic inputs, and undervoltage lockout (UVLO) protection. IXYS Gate Drivers for N-Channel MOSFETs and IGBTs operate over an extended temperature range of -40°C to +125°C.Features
- Common
- Drives two N-channel MOSFETs or IGBTs in a half-bridge configuration or high-side / low-side configuration
- Logic input 3.3V capability
- Schmitt triggered logic inputs
- UVLO protection
- -40°C to +125°C temperature range
- Half-Bridge Gate Drivers
- Floating high-side driver in bootstrap operation to 600V
- Outputs tolerant to negative transients
- 3-Phase Half-Bridge Gate Drivers
- Three floating high-side drivers in bootstrap operation to 600V
- Matched propagation delay
- Cross-conduction prevention logic
- High-Side / Low-Side Gate Drivers
- Floating high-side driver in bootstrap operation to 600V
- Outputs tolerant to negative transients (depending on model)
Applications
- Half-Bridge Gate Drivers and High-Side / Low-Side Gate Drivers
- DC-DC converters
- AC-DC inverters
- Motor controls
- Motor drivers
- Class D power amplifiers
- 3-Phase Half-Bridge Gate Drivers
- 3-phase motor inverter drivers
- White goods - air conditioners, washing machines, refrigerators
- Industrial motor inverters - power tools, robotics
- General-purpose 3-phase inverters
Videos
Published: 2021-11-15
| Updated: 2023-04-06