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Mini-Circuits M3SWA2 50Ω Absorptive MMIC SPDT RF Switch

Mini-Circuits M3SWA2 50Ω Absorptive MMIC SPDT RF Switch with internal driver is designed for wideband operation from DC to 6GHz and supports many applications that require nano-second switching across a wide frequency range. The component provides excellent isolation, high linearity, and excellent thermal contact in a 3mm x 3mm 12L package. The M3SWA2 SPDT RF Switch is ideal for use in defense, communication infrastructure, and test/measurement applications.

Features

  • High isolation, 63dB typical at 1GHz
  • High IIP3, +44dBm typical at 1GHz
  • Low insertion loss, 0.5dB typical at 1GHz
  • Fast rise/fall time, 5.6ns/6ns typical
  • Tiny size, 3mm x 3mm, 12L MCLP
  • Wideband, DC to 6GHz
  • Nano-second switching
  • Onboard internal driver
  • Moisture sensitivity level (MSL) 1
  • RoHS compliant

Applications

  • Defense
  • Communication infrastructure
  • Test and measurement

Specifications

  • -55°C to +100°C temperature range
  • Maximum RF power
    • 27dBm at the input port
    • 24dBm at the output port
  • 50Ω impedance
  • +150°C maximum junction temperature
  • 0.4W maximum total power dissipation
  • DC to 6000MHz frequency range

Simplified Schematic & Pad Description

Schematic - Mini-Circuits M3SWA2 50Ω Absorptive MMIC SPDT RF Switch
Published: 2021-05-04 | Updated: 2024-09-03