NXP Semiconductors MRF1K50H 1500W RF Power LDMOS Transistor

NXP MRF1K50H 1500W RF Power LDMOS Transistor combines high RF output power with superior ruggedness and thermal performance. The transistor is designed to deliver 1.50kW CW at 50V and allows a reduction in the number of transistors in high-power RF amplifiers. MRF1K50H has an input and output design that allows for wide frequency range use from 1.8MHz to 500MHz. Applications include laser and plasma sources to particle accelerators, industrial welding machines, radio and VHF TV broadcast transmitters, and amateur radio linear amplifiers.

Features

Housed in a NI-1230 air-cavity ceramic package
Extreme Ruggedness, 65:1 VSWR
High drain-source avalanche energy absorption capability
Unmatched input and output allows wide frequency range utilization
Can be used single-ended or in a push-pull configuration

Characterized from 30V to 50V for ease of use
Suitable for linear applications
Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
RoHS compliant

Applications

Industrial, Scientific, Medical (ISM)
- Laser generation
- Plasma etching
- Particle accelerators
- MRI and other medical applications
- Industrial heating, welding, and drying systems
Broadcast
- Radio broadcast
- VHF TV broadcast

Aerospace
- VHF Omnidirectional Range (VOR)
- HF and VHF communications
- Weather radar
Mobile radio
- VHF and UHF base stations

Specifications

50V_DC maximum operating voltage
230MHz frequency
Typical capacitance
- 3.48pF reverse transfer
- 205pF output
- 664pF input
22.5dB to 25.5dB power gain range
74.0% typical drain efficiency
-9dB maximum input return loss

50V test voltage
Junction to case
- 0.10°C/W thermal resistance
- 0.028°C/W thermal impedance
>65:1 VSWR at all phase angles
Temperature ranges
- -40°C to +150°C case operating
- -40°C to +225°C operating junction
- -65°C to +150°C storage