Back to onsemi

onsemi NVHL070N120M3S EliteSiC Automotive SiC MOSFET

onsemi NVHL070N120M3S EliteSiC Automotive Silicone Carbide (SiC) MOSFET is a 1200V M3S planar device optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn-off spikes on the gate. This device delivers optimum performance when driven with an 18V gate drive but also works well with a 15V gate drive.

Features

  • Ultra-low gate charge
  • High-speed switching with low capacitance
  • TO-247-3L package
  • 100% Avalanche tested
  • AEC−Q101 qualified and PPAP capable
  • Halide-free and RoHS compliant with exemption 7a, lead-free 2LI (on second level interconnection)

Applications

  • Automotive onboard chargers
  • Automotive DC-DC converters for EV/HEV

Specifications

  • Off-state
    • 1200V minimum drain-to-source breakdown voltage
    • 0.3V/°C typical drain-to-source breakdown voltage temperature coefficient
    • 100µA maximum zero gate voltage drain current
    • ±1µA maximum gate-to-source leakage current
  • On-state
    • 2.04V to 4.4V gate threshold voltage
    • -3V to 18V recommended gate voltage range
    • 65mΩ to 136mΩ typical drain-to-source on resistance
    • 12S forward transconductance
  • Charges, capacitances, and gate resistance
    • 1230pF typical input capacitance
    • 57pF typical output capacitance
    • 5pF typical reverse transfer capacitance
    • 57nC typical total gate charge
    • 3.2nC typical threshold gate charge
    • 9.6nC typical gate-to-source charge
    • 17nC typical gate-to-drain charge
    • 4.3Ω typical gate-resistance
  • Switching
    • 10ns typical turn-on delay time
    • 24ns typical rise time
    • 29ns typical turn-off delay time
    • 9.6ns typical fall time
    • 254µJ typical turn-on switching loss
    • 46µJ typical turn-off switching loss
    • 300µJ typical total switching loss
  • Source-drain diode
    • 31A maximum continuous forward current
    • 98A maximum pulsed forward current
    • 4.7V typical forward diode voltage
    • 14ns typical reverse recovery time
    • 57nC typical reverse recovery charge
    • 3.1µJ typical reverse recovery energy
    • 8.2A typical peak reverse recovery current
    • 7.7ns typical charge time
    • 6.2ns typical discharge time
  • Maximum thermal resistance
    • 0.94°C/W junction-to-case
    • 40°C/W junction-to-ambient
  • -55°C to +175°C operating junction temperature range

Schematic

Schematic - onsemi NVHL070N120M3S EliteSiC Automotive SiC MOSFET

Additional Resources

Learn More About EliteSiC

onsemi EliteSiC

Addresses the needs of demanding applications like solar inverters, and electric vehicle chargers.

Learn Moreabout onsemi EliteSiC
Published: 2023-12-19 | Updated: 2024-06-18