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ROHM Semiconductor RH7G04 40V N-Channel Power MOSFETs

ROHM Semiconductor RH7G04 40V N-Channel Power MOSFETs are 40V drain-source voltage (VDSS) and ±40A continuous drain current (ID) rated automotive-grade MOSFETs that are AEC-Q101 qualified. These MOSFETs feature a low drain-source on-state resistance [RDS(ON)] and are available in a 3.3mm x 3.3mm DFN-8 (DFN3333T8LSAB) package. The ROHM Semiconductor RH7G04 MOSFETs are ideal for Advanced Driver Assistance Systems (ADAS), information, lighting, and body applications.

Features

  • Wettable flanks product
  • AEC-Q101 qualified
  • 100% avalanche tested

Applications

  • ADAS
  • Information
  • Lighting
  • Body

Specifications

  • Drain-source on-state resistance [RDS(ON)]
    • RH7G04BBKFRA
      • 3.1mΩ (max.) (VGS = 10V, ID = 20A)
      • 5.8mΩ (max.) (VGS = 4.5V, ID = 10A)
    • RH7G04CBLFRA
      • 5.8mΩ (max.) (VGS = 10V, ID = 20A)
      • 8.7mΩ (max.) (VGS = 4.5V, ID = 10A)
    • RH7G04DBKFRA
      • 12.6mΩ (max.) (VGS = 10V, ID = 20A)
      • 23.9mΩ (max.) (VGS = 4.5V, ID = 10A)
  • Power dissipation (PD)
    • RH7G04BBKFRA - 75W
    • RH7G04CBLFRA - 62W
    • RH7G04DBKFRA - 33W
  • Total gate charge (Qg)
    • RH7G04BBKFRA
      • 26.8nC (typ.) (VDD = 20V, ID = 10A, VGS = 10V)
      • 13.5nC (typ.) (VDD = 20V, ID = 10A, VGS = 4.5V)
    • RH7G04CBLFRA
      • 17.7nC (typ.) (VDD = 20V, ID = 10A, VGS = 10V)
      • 8.9nC (typ.) (VDD = 20V, ID = 10A, VGS = 4.5V)
    • RH7G04DBKFRA
      • 7.6nC (typ.) (VDD = 20V, ID = 10A, VGS = 10V)
      • 4.2nC (typ.) (VDD = 20V, ID = 10A, VGS = 4.5V)

Circuit Diagram

Schematic - ROHM Semiconductor RH7G04 40V N-Channel Power MOSFETs

Package Diagram

Mechanical Drawing - ROHM Semiconductor RH7G04 40V N-Channel Power MOSFETs
Published: 2025-07-24 | Updated: 2025-08-19