ROHM Semiconductor SH8M Dual Nch+Pch Power MOSFET

ROHM Semiconductor SH8M Dual Nch+Pch Power MOSFET includes two 60V MOSFETs in a small, surface-mount SOP8 package with eight terminals. If offers low on-resistance, ±6.5A/±7A drain current ID, 32mΩ to 33mΩ RDS(on) maximum, and 2W power dissipation. ROHM Semiconductor SH8M Dual Nch+Pch Power MOSFET utilizes Pb-free plating and is halogen free as well as RoHS compliant. The SH8M is Ideal for switching applications.

Features

  • Dual Nch+Pch polarity
  • 8 terminals
  • Low on-resistance
  • Small surface-mount package (SOP8)
  • Ideal for switching applications
  • Pb-free plating
  • RoHS compliant
  • Halogen free

Specifications

  • -60V to 60V drain source voltage (VDSS)
  • 32mΩ to 33mΩ RDS(on) maximum
  • ±6.5A/±7A drain current ID
  • 2W power dissipation

Comparison Chart

ROHM Semiconductor SH8M Dual Nch+Pch Power MOSFET

Smaller Size & Component Count

ROHM Semiconductor SH8M Dual Nch+Pch Power MOSFET

Solution Examples

        •   QH8MC5 (±60V Nch+Pch Dual MOSFET) + BD63001AMUV (3-Phase Brushless Motor Pre-Driver IC)
        •   SH8KB6 (+40V Nch+Nch Dual MOSFET) + BM62300MUV (3-Phase Brushless Pre-Driver IC)
        •   SH8KB6 (+40V Nch+Nch Dual MOSFET) + BD63002AMUV (3-Phase Brushless Pre-Driver IC)

Published: 2021-06-30 | Updated: 2024-02-05