STMicroelectronics FERD Field Effect Rectifiers
STMicroelectronics Field-Effect Rectifier Diodes (FERDs) help improve applications with designs focusing on trade-off upgrades. The design of the FERDs has allowed both a decrease in the voltage drop and a decrease in the leakage current temperature coefficient. As a result, the runaway safety margin is improved and maybe beyond the typical safety margin of Schottky barrier diodes. Depending on the targeted application and its voltage, developers can now choose the best compromise in terms of forward voltage drop (VF) and leakage current (IR).
The 'U' in the part number indicates a very low forward voltage drop (VF). The 'L' indicates a low forward voltage drop (VF). The 'M' and 'SM' indicate a medium forward voltage drop with an optimized leakage current (IR). The 'H' and 'S' inidcate a low leakage current at high temperatures (low IR).
For a given package size, STM's advanced FERD technology allows better density and more efficiency than Schottky barrier devices. The 60V and 100V devices are available in through-hole as well as PowerFLAT™, D2PAK and DPAK versions. Smaller and more optimized packages allow the design of more compact chargers, adapters and SMPS with less power losses, therefore less heat-sinking.
Features
- Lower VF x IR than corresponding Schottky diodes
- Smaller chip than Schottky for the same current rating
- Advanced rectifier proprietary process
- Lower thermal coefficient
- Stable leakage current over reverse voltage
- Low forward voltage drop
- High frequency operation
- ECOPACK2 components
Applications
- Industrial power
- Factory automation
- Tooling chargers
- DC-DC converters
- SMPS
- USB chargers
- Auxiliary power
- Server and telecom power
- Air-conditioning
- Home appliances
- UPS
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A broad range of drop-in replacements for general-purpose analog ICs, discretes, and serial EEPROMs.