STMicroelectronics STAC RF DMOS Transistors
STMicroelectronics STAC RF DMOS Transistors are designed for applications ranging from 1MHz to 250MHz, such as FM broadcast, industrial, scientific and medical applications. STMicroelectronics RF DMOS transistors operate from a supply voltage of up to 300V. They feature high peak power (up to 1.2kW) and high ruggedness capability (infinite:1VSWR). The STAC air cavity features enhanced thermal behavior, improved RF performance and best-in-class reliability.
Features
- 50V
- Up to 350W output power
- Up to more than 200V breakdown voltage
- 1 million power cycles reliability
- Low thermal resistance
- ST air cavity (STAC) package option for improved junction-to-case thermal resistance (-25%) and improved RF performance
- 100/150V
- 150W up to 1.2kW output power
- 100/150V supply voltage
- >20dB gain
- >60% efficiency
- Best-in-class reliability
- Excellent thermal stability
- ST air cavity (STAC) package option for improved junction-to-case thermal resistance (-25%) and improved RF performance compared to ceramic packages
- 250/300V
- Up to 600W output power
- 250V supply voltage
- >20dB gain
- >70% efficiency
- Best in-class reliability
- ST air cavity (STAC) package option for improved junction-to-case thermal resistance (-25%) and improved RF performance compared to ceramic packages
Applications
- RF plasma generators
- Laser drivers
- RF heating
- Magnetic resonance imaging (MRI)
- HF transceivers
- FM broadcast
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Published: 2013-05-09
| Updated: 2025-09-04