Mouser Now Stocking UnitedSiC (Now Qorvo) UF4C/SC 1200V Gen 4 SiC FETs for Power Applications
May 25, 2022 – Mouser Electronics, Inc., the industry’s leading New Product Introduction (NPI) distributor with the widest selection of semiconductors and electronic components™, is now stocking the UF4C and UF4SC 1200 V silicon carbide (SiC) FETs from UnitedSiC (now Qorvo®). Part of the extensive line of high-performance SiC FETs, this fourth-generation family of devices offers industry-leading figures of merit in on-resistance, suiting it to power solutions in mainstream 800 V bus architectures in applications such as on-board chargers for EVs, industrial battery chargers, industrial power supplies, DC-DC solar inverters, and more.
The UF4C/SC SiC FETs, available from Mouser Electronics, provide designers with multiple on-resistance and package options. The 1200 V SiC FETs are offered in versions with on-resistance (RDS(on)) values of 23 mΩ to 70 mΩ and either a three-lead TO-247-3L package or a four-lead TO-247-4L package. The TO-247-4L package incorporates a Kelvin gate to deliver ultra-low gate charge and exceptional reverse recovery characteristics, enabling designers to switch inductive loads and any application requiring a standard gate drive.
All the devices in the UF4C/SC family can be safely driven with standard 0 V to 12 V or 15 V gate drive voltage, creating a suitable replacement for silicon IGBTs, FETs, or super-junction devices without changing the gate drive voltage. Other notable features of the UF4C/SC SiC FETs include an exceptional threshold noise margin preserved with a true 5 V threshold voltage, excellent reverse recovery, and a built-in ESD gate protection clamp.
To learn more, visit https://www.mouser.com/new/unitedsic/unitedsic-uf4csc-1200v-gen4-sic-fets/.
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