STMicroelectronics Power MOSFETs & IGBTs for SMPSSTMicroelectronics offers the newest technologies when it comes to SMPS. Targeting both high-end SMPS applications and price-sensitive SMPS designs, ST offers a wide portfolio of MOSFETS and IGBTs meeting all your design needs. ST's portfolio includes high-voltage super-junction MOSFETs and trench-gate field-stop IGBTs for PFC and PWM stages, and low-voltage trench-based MOSFETs for synchronous rectification. ST's latest 1200V SiC MOSFETs combine the industry's highest junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. For synchronous rectification, the low-voltage STripFET F7 series feature extremely low on-state resistance and an optimal capacitance Crss/Ciss ratio. Explore ST's complete offering of MOSFETs and IGBTs for SMPS designs.
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STMicroelectronics MDmesh™ M5 Power MOSFETs
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STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs are optimized for high-power hard switching topologies (PFC, boost, TTF, Flyback). They significantly reduce losses in
line-voltage PFC circuits thanks to the outstanding RDS(on) values. This in turn enables new
generations of electronic products offering greater energy savings,
superior power density, and more compact and efficient designs (smaller form factor). This new
technology will help product designers tackle emerging challenges such
as the high-efficiency targets of new eco-design directives, and will
also benefit the renewable energy sector by saving vital watts normally
lost in power-control modules. STMicroelectronics MDmesh M5 MOSFETs
feature a silicon-based technology that combines an innovative
proprietary vertical technology process with STMicroelectronics'
PowerMESH horizontal layout. This technology achieves up to 40% better RDS(on) versus the previous MDmesh II technology and establishes a new milestone in the power switch arena. Features
- Outstanding RDS(on) area values
- Fast switching
- High VDSS rating
- High dV/dt capability
- Easy to drive
- 100% avalanche tested
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Applications
- SMPS (computers, high efficiency adapters, and telecom)
- Lighting (electronic ballast, HID)
- Displays (TVs, monitors)
- Solar converters
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Power MOSFETs
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MDmesh M5 Power MOSFETs
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about MDmesh M5 Power MOSFETs
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STMicroelectronics MDmesh™ M2 Power MOSFETs
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STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies). This is due to reduced switching losses thanks to the optimized gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads. The MDmesh M2 have increased system reliability thanks to the high dV/dt capability (50V/ns). The 650V devices ensuring a higher safety margin for more robust and reliable applications.
Features
- Improved low load efficiency
- Best efficiency in LLC topologies
- Fully insulated and low profile package with increased creepage path from pin to heatsink plate
- Lower RDS(on) x area vs previous generation
- 100% avalanche tested
- Low input capacitance and gate charge
- Zener-protected
- Low gate input resistance
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Applications
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STMicroelectronics MDmesh™ DM2 Power MOSFETs
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STMicroelectronics MDmesh DM2 series are ST's latest fast recovery diode series of 600V power MOSFETs optimized for ZVS phase-shift bridge topologies. They feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability. The MDmesh DM2 have increased efficiency thanks to the improved intrinsic diode reverse recovery time (Trr). Features- Extremely low gate charge and input capacitance
- Lower RDS(on) x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
- Extremely high dv/dt and avalanche capabilities
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STMicroelectronics MDmesh™ K5 Power MOSFETs
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STMicroelectronics MDmesh K5 series are very high voltage MOSFETs with super-junction, industry's lowest RDS(on) for increased efficiency and more compact designs, and figure of merit for increased power density. Voltage ratings include 800V, 950V, and 1050V.
Features
- Extremely high dv/dt capability
- 100% avalanche tested
- Industry's best figure of merit (FoM)
- Ultra low gate charge
- Zener-protected
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Applications
- Switch Mode Low Power Supplies (SMPS)
- DC-DC Converters
- Low Power, Low Cost CFL
- Low Power Battery Chargers
- Switching Applications
- High Current, High Speed Switching
- Lighting
- Off-Line Power Supplies, Adapters and PFC
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STMicroelectronics STripFET™ F7 Power MOSFETs
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STMicroelectronics STripFET F7 MOSFETs series feature an
enhanced trench-gate structure with faster and more
efficient switching for simplified designs and reduced equipment size
and cost. Low on-state resistance combined with low switching losses
lower on-state resistance while reducing internal capacitances and gate
charge. They are ideal for synchronous rectification and have an
optimal capacitance Crss/Ciss ratio for lowest EMI. The STripFET F7
feature high avalanche ruggedness.
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| STMicroelectronics STripFET™ H7 Power MOSFETs
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STMicroelectronics STripFET H7 series are optimized for high-density, high-performance power management systems. The STripFET H7 have low conduction losses for a better efficiency, and switching performance improvement (lower VDS spike and no HF ringing). This series of trench-gate low-voltage MOSFETs combine an extremely low on-resistance and ultra low capacitances with an optimized built-in Schottky diode for higher switching frequency operation.
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| STMicroelectronics SiC MOSFETs
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STMicroelectronics (SiC) MOSFETs feature very low RDS(on) area for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems. They have increased switching efficiency and operating frequency with the lowest Eoff vs. standard silicon technologies. A reduced form factor is possible thanks to the intrinsic body diode. Higher system efficiency and reliability are due to the maximum junction temperature at 200ºC.
Features
- Slight variation of switching losses vs. temperature
- Very high operating temperature capability (200°C)
- Very fast and robust intrinsic body diode
- Low capacitance
- Easy to drive
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Applications- Solar inverters, UPS
- Motor drives
- High voltage DC-DC converters
- Switch mode power supplies
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STMicroelectronics IGBT V Series
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STMicroelectronics 600V trench-gate field-stop very high speed IGBT V series feature the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz) and simplified thermal and EMI design.
Features
- Increased switching efficiency and operating frequency
- Industry's lowest Eoff among silicon based technologies
- Increase maximum operating frequency by eliminating conventional IGBT turn-off current tail
- Ultra-thin die thickness assist switching performance and improves thermal dissipation
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STMicroelectronics IGBT HB Series
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STMicroelectronics 650V HB series IGBTs combine a very low saturation voltage (down to 1.6V)
with a minimal collector current turn-off tail and a maximum operating
temperature of 175°C. This enhances the efficiency of high-frequency
applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure. Features
- Optimized for soft switching application, low EMI, high efficiency due to low Vce(sat)
- Minimizing energy losses during switching and when turned on
- The technology is well controlled, producing a tight distribution window of parameters, enhancing repeatability and simplifying system design
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STMicroelectronics IGBT H Series
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STMicroelectronics IGBT H Series leverage the advanced proprietary trench gate field-stop (TGFS) structure. The H series of 1200V IGBTs have up to 15% lower turn-off losses and up to 30% lower turn-on losses. The saturation voltage Vce(sat) down to 2.1V (typical, at nominal collector current and 100°C) ensures minimal overall losses for higher-efficiency operation at switching frequencies above 20kHz. In addition, these new 1200V IGBTs offer the option of an integrated very fast-recovery anti-parallel diode for optimum performance in hard-switching circuits and minimizing energy losses in circuits with a freewheel diode. The extended maximum operating junction temperature of 175°C helps enhance service lifetime and simplify system cooling. A wide Safe Operating Area (SOA) boosts reliability in applications where high power dissipation is required. Features
- Excellent EMI (electromagnetic interference) characteristics thanks to a near ideal waveform during switching events, which competing high-frequency devices cannot achieve
- Positive temperature coefficient of Vce(sat), with close distribution of parameters from device to device
- VCE(sat) = 2.1V (typ.) @ IC = 40A
- High speed switching series
- Minimized tail current
- 5μs minimum short circuit withstand time at TJ=150°C
- Safe paralleling for high-power applications
- Very fast recovery antiparallel diode
- Low thermal resistance
- Lead free package
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Applications
- Uninterruptible power supply
- Welding machines
- Photovoltaic inverters
- Power factor correction
- High frequency converters
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