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AS4C8M16MSA-6BIN

Name: Alliance Memory AS4C8M16MSA-6BIN
Brand: Alliance Memory
SKU: 913-AS4C8M16MSA-6BIN
Price: 813.46 INR
Availability: InStock

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Mouser No:

913-AS4C8M16MSA-6BIN

Mfr. No:

AS4C8M16MSA-6BIN

Mfr.:

Alliance Memory

Description:

DRAM 128M 166MHz 8Mx16 Mobile LP SDRAM IT

Datasheet:

AS4C8M16MSA-6BIN Datasheet (PDF)

ECAD Model:

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In Stock: 182

Stock:: 182 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹813.46	₹813.46
	₹757.55	₹7,575.50
	₹734.26	₹18,356.50
	₹716.55	₹35,827.50
	₹699.78	₹69,978.00
	₹670.90	₹1,67,725.00
	₹653.19	₹3,26,595.00
	₹636.42	₹6,09,053.94

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Alliance Memory
Product Category:	DRAM
RoHS:
Type:	SDRAM Mobile
Memory Size:	128 Mbit
Data Bus Width:	16 bit
Maximum Clock Frequency:	166 MHz
Package/Case:	FBGA-54
Organisation:	8 M x 16
Access Time:	5.5 ns
Supply Voltage - Min:	1.7 V
Supply Voltage - Max:	1.95 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Series:	AS4C8M16MSA-6
Packaging:	Tray
Brand:	Alliance Memory
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Product Type:	DRAM
Factory Pack Quantity:	319
Subcategory:	Memory & Data Storage
Supply Current - Max:	50 mA
Unit Weight:	3.188 g

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Datasheet

AS4C8M16MSA-6BIN Datasheet (PDF)

Compliance Codes

CNHTS:: 8542329000
CAHTS:: 8542320020
USHTS:: 8542320002
MXHTS:: 8542320201
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Taiwan
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

Mobile Low Power SDRAMs

Alliance Memory Mobile Low Power SDRAMs are high-performance CMOS Dynamic RAMs (DRAM) with a 64ms refresh period (4K cycle). These devices feature advanced circuit design to provide low active current and extremely low standby current. The low power features include Auto Temperature Compensated Self Refresh (TCSR), partial array self-refresh power-saving mode, deep power-down mode, and driver strength control.