SCT4013DRC15

ROHM Semiconductor
755-SCT4013DRC15
SCT4013DRC15

Mfr.:

Description:
SiC MOSFETs TO247 750V 105A N-CH SIC

Datasheet:
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In Stock: 402

Stock:
402 Can Dispatch Immediately
Factory Lead Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
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Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹3,122.84 ₹3,122.84
₹2,396.03 ₹23,960.30
₹2,303.50 ₹2,30,350.00
₹2,301.70 ₹10,35,765.00
900 Quote

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-4
N-Channel
1 Channel
750 V
105 A
16.9 mOhms
- 4 V, + 21 V
4.8 V
170 nC
+ 175 C
312 W
Enhancement
Brand: ROHM Semiconductor
Configuration: Single
Fall Time: 17 ns
Forward Transconductance - Min: 32 S
Packaging: Tube
Product: MOSFET's
Product Type: SiC MOSFETS
Rise Time: 32 ns
Factory Pack Quantity: 450
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 82 ns
Typical Turn-On Delay Time: 17 ns
Part # Aliases: SCT4013DR
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Attributes selected: 0

Datasheet

Specification Sheets

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CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

SCT4013DR N-Channel SiC Power MOSFET

ROHM Semiconductor SCT4013DR N-Channel Silicon Carbide (SiC) Power MOSFET is a high-performance device designed for demanding power electronics applications. Featuring a drain-source voltage rating of 750V and a 105A continuous drain current (at +25°C), this device offers exceptional efficiency and thermal performance. The low on-resistance of 13mΩ (typical) and fast switching characteristics make the ROHM SCT4013DR ideal for high-frequency applications such as power supplies, inverters, and motor drives. The SCT4013DR also benefits from the inherent advantages of SiC technology, including a high breakdown voltage, low switching losses, and superior thermal conductivity, which contribute to reduced system size and improved reliability. Packaged in a TO-247-4L case, the MOSFET supports robust thermal management and ease of integration into existing designs.

750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [RDS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (ID) and source current (IS) (TC=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.

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