DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.

Results: 113
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (INR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging

Toshiba MOSFETs MOSFET NChtrr135ns 0.082ohm DTMOS
Datasheet
3In Stock
30Expected 23-02-2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30.8 A 82 mOhms - 30 V, 30 V 4.5 V 105 nC - 55 C + 150 C 230 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel
Datasheet
5In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 35 A 80 mOhms - 30 V, 30 V 3 V 115 nC - 55 C + 150 C 50 W Enhancement DTMOSIV Tube
Toshiba MOSFETs MOSFET NChannel 068ohm DTMOS
Datasheet
50In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 35 A 68 mOhms - 30 V, 30 V 3.5 V 100 nC - 55 C + 150 C 50 W Enhancement DTMOSIV Tube

Toshiba MOSFETs MOSFET NChtrr130ns 0.08ohm DTMOS
Datasheet
9In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 35 A 80 mOhms - 30 V, 30 V 4.5 V 115 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch DTMOSIV 600 V 50W 4100pF 38.8A
Datasheet
85In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 38.8 A 55 mOhms - 30 V, 30 V 3.7 V 110 nC - 55 C + 150 C 50 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 38.8A 270W FET 600V 4100pF 135nC
Datasheet
13In Stock
50Expected 16-03-2026
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 38.8 A 55 mOhms - 30 V, 30 V 3.7 V 110 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 38.8A 270W FET 600V 4100pF 110nC
Datasheet
25In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 38.8 A 65 mOhms - 30 V, 30 V 2.7 V 110 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube

Toshiba MOSFETs DTMOSIV 600V 65mOhm 38.8A 270W 4100pF
Datasheet
40In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38.8 A 55 mOhms - 30 V, 30 V 3.7 V 110 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube

Toshiba MOSFETs TO247(OS) PD=400W 1MHz PWR MOSFET TRNS
Datasheet
30In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 49.2 A 57 mOhms - 30 V, 30 V 4.5 V 185 nC - 55 C + 150 C 400 W Enhancement DTMOSIV Tube

Toshiba MOSFETs N-Ch Power MOSFET Transistor
Datasheet
57In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 49.2 A 55 mOhms - 30 V, 30 V 2.5 V 160 nC + 150 C 400 W Enhancement Tube
Toshiba MOSFETs N-Ch 61.8A 400W FET 600V 3500pF 180nC
Datasheet
25In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 61.8 A 33 mOhms - 30 V, 30 V 3.7 V 180 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube

Toshiba MOSFETs DTMOSIV 600V 45mOhm 61.8A 400W 6500pF
Datasheet
104In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61.8 A 36 mOhms - 30 V, 30 V 3 V 205 nC - 55 C + 150 C 400 W Enhancement DTMOSIV Tube

Toshiba MOSFETs DTMOSIV 600V 40mOhm 61.8A 400W 6500pF
Datasheet
10In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61.8 A 33 mOhms - 30 V, 30 V 3.7 V 180 nC - 55 C + 150 C 400 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 6.2A 30W FET 600V 390pF 12nC
Datasheet
169In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 6.2 A 680 mOhms - 30 V, 30 V 3.7 V 12 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFETs DTMOSIV 600V 820mOhm 6.2A 60W 390pF 12nC
Datasheet
197In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 6.2 A 680 mOhms - 30 V, 30 V 3.7 V 12 nC - 55 C + 150 C 60 W DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel
Datasheet
86In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7 A 540 mOhms - 30 V, 30 V 3 V 16 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 7A 30W FET 600V 490pF 15nC
Datasheet
44In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7 A 600 mOhms - 30 V, 30 V 2.7 V 15 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel
Datasheet
114In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 6.8 A 640 mOhms - 30 V, 30 V 2.5 V 15 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 7A 60W FET 600V 490pF 15nC
Datasheet
709In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 7 A 500 mOhms - 30 V, 30 V 3.7 V 15 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFETs Power MOSFET N-Channel
Datasheet
446In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 6.8 A 660 mOhms - 30 V, 30 V 2.5 V 15 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFETs N-Ch DTMOSIV 600 V 60W 490pF 15nC 7A
Datasheet
144In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 7 A 500 mOhms - 30 V, 30 V 3.7 V 15 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Tube
Toshiba MOSFETs POWER MOSFET TRANSISTOR TO-247-4L PD=190W F=1MHZ
Datasheet
40On Order
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 24 A 110 mOhms - 10 V, 10 V 3 V 40 nC - 55 C + 150 C 190 W Enhancement Tube
Toshiba MOSFETs N-Ch 15.8A 130W FET 600V 1350pF 38nC
Datasheet
80Expected 17-07-2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 15.8 A 160 mOhms - 30 V, 30 V 3.7 V 30 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube

Toshiba MOSFETs DTMOSIV 600V 88mOhm 30.8A 230W 3000pF
Datasheet
30Expected 23-02-2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms - 30 V, 30 V 3.7 V 86 nC - 55 C + 150 C 230 W Enhancement DTMOSIV Tube
Toshiba MOSFETs TO-220SIS PD=30W 1MHz PWR MOSFET TRNS
Datasheet
Non-Stocked Lead-Time 32 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 9.7 A 380 mOhms - 30 V, 30 V 2.7 V 20 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube