SiC MOSFETs

Results: 22
Select Image Part # Mfr. Description Datasheet Availability Pricing (INR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 1,333In Stock
Min.: 1
Mult.: 1
: 1,800

SiC SMD/SMT HDSOP-16 N-Channel 1 Channel 400 V 144 A 14.4 mOhms - 7 V, 23 V 4.5 V 85 nC - 55 C + 175 C 429 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 1,530In Stock
Min.: 1
Mult.: 1
: 2,000

SiC SMD/SMT HSOF-8 N-Channel 1 Channel 440 V 144 A 14.4 mOhms - 7 V, 23 V 4.5 V 85 nC - 55 C + 175 C 429 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 1,620In Stock
Min.: 1
Mult.: 1
: 1,800

SiC SMD/SMT HDSOP-16 N-Channel 1 Channel 400 V 111 A 19.1 mOhms - 7 V, 23 V 4.5 V 62 nC - 55 C + 175 C 341 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 1,260In Stock
Min.: 1
Mult.: 1
: 1,800

SiC SMD/SMT HDSOP-16 N-Channel 1 Channel 400 V 50 A 45.7 mOhms - 7 V, 23 V 4.5 V 26 nC - 55 C + 175 C 167 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 1,260In Stock
Min.: 1
Mult.: 1
: 1,800

SiC SMD/SMT HDSOP-16 N-Channel 1 Channel 400 V 43 A 56.2 mOhms - 7 V, 23 V 4.5 V 21 nC - 55 C + 175 C 150 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 1,791In Stock
Min.: 1
Mult.: 1
: 2,000

SiC SMD/SMT HSOF-8 N-Channel 1 Channel 440 V 111 A 19.1 mOhms - 7 V, 23 V 4.5 V 62 nC - 55 C + 175 C 341 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 1,787In Stock
Min.: 1
Mult.: 1
: 2,000

SiC SMD/SMT HSOF-8 N-Channel 1 Channel 440 V 68 A 32.1 mOhms - 7 V, 23 V 4.5 V 36 nC - 55 C + 175 C 214 W CoolSiC Reel, Cut Tape
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 140In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 400 V 104 A 14.4 mOhms - 7 V, 23 V 4.5 V 85 nC - 55 C + 175 C 341 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 199In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 400 V 94 A 19.1 mOhms - 7 V, 23 V 4.5 V 62 nC - 55 C + 175 C 273 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 316In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 400 V 65 A 32.1 mOhms - 7 V, 23 V 4.5 V 36 nC - 55 C + 175 C 195 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 240In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 99 A 19.1 mOhms - 7 V, 23 V 4.5 V 62 nC - 55 C + 175 C 273 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 202In Stock
3,600Expected 24-12-2026
Min.: 1
Mult.: 1
: 1,800

SiC SMD/SMT HDSOP-16 N-Channel 1 Channel 400 V 68 A 32.1 mOhms - 7 V, 23 V 4.5 V 36 nC - 55 C + 175 C 214 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 237In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 400 V 46 A 45.7 mOhms - 7 V, 23 V 4.5 V 26 nC - 55 C + 175 C 139 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 226In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 400 V 40 A 56.2 mOhms - 7 V, 23 V 4.5 V 21 nC - 55 C + 175 C 130 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 139In Stock
240Expected 11-06-2026
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 112 A 14.4 mOhms - 7 V, 23 V 4.5 V 85 nC - 55 C + 175 C 341 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 240In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 65 A 32.1 Ohms - 7 V, 23 V 4.5 V 36 nC - 55 C + 175 C 195 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 240In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 46 A 45.7 mOhms - 7 V, 23 V 4.5 V 26 nC - 55 C + 175 C 139 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 240In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 40 A 56.2 Ohms - 7 V, 23 V 4.5 V 21 nC - 55 C + 175 C 130 W Enhancement CoolSiC Tube
Microchip Technology MOSFETs MOSFET SIC 1200 V 17 mOhm TO-247 11In Stock
90Expected 08-06-2026
Min.: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 113 A 22 mOhms - 10 V, 23 V 2.7 V - 55 C + 175 C 455 W Tube
Infineon Technologies MOSFETs AUTOMOTIVE_SICMOS
220Expected 28-05-2026
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 750 V 163 A 10.6 mOhms - 5 V, 23 V 5.6 V 178 nC - 55 C + 175 C 517 W Enhancement AEC-Q101 CoolSiC Tube
IXYS MOSFETs 200V < 2mohm X4 n-channel MOSFET in SMPD -X
320On Order
Min.: 1
Mult.: 1

SiC SMD/SMT SMPD-24 N-Channel 1 Channel 200 V 480 A 1.99 mOhms - 20 V, 20 V 4.5 V 535 nC - 55 C + 175 C 1.07 kW Enhancement Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET Lead-Time 52 Weeks
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 750 V 163 A 10.6 mOhms - 5 V, 23 V 5.6 V 178 nC - 55 C + 175 C 517 W Enhancement CoolSiC Tube