|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
- SCT019HU120G3AG
- STMicroelectronics
-
1:
₹2,008.25
-
1In Stock
-
600Expected 23-07-2027
-
New Product
|
Mouser Part No
511-SCT019HU120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
|
|
1In Stock
600Expected 23-07-2027
|
|
Min.: 1
Mult.: 1
:
600
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q100
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
- SCT020HU120G3AG
- STMicroelectronics
-
1:
₹2,127.68
-
1,271In Stock
|
Mouser Part No
511-SCT020HU120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
|
|
1,271In Stock
|
|
Min.: 1
Mult.: 1
:
600
|
|
|
SMD/SMT
|
HU3PAK-7
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
|
555 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
- SCT012W90G3-4AG
- STMicroelectronics
-
1:
₹2,322.58
-
558In Stock
|
Mouser Part No
511-SCT012W90G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
|
|
558In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-3
|
1 Channel
|
900 V
|
110 A
|
15.8 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
138 nC
|
- 55 C
|
+ 200 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
₹2,648.37
-
443In Stock
|
Mouser Part No
511-SCT015W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
443In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
1 Channel
|
1.2 kV
|
129 A
|
15 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
167 nC
|
- 55 C
|
+ 200 C
|
673 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
₹1,912.71
-
181In Stock
-
600On Order
|
Mouser Part No
511-SCT020W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
181In Stock
600On Order
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
Hip247-4
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
+ 200 C
|
541 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
₹1,300.30
-
460In Stock
-
1,000On Order
|
Mouser Part No
511-SCT027H65G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
|
|
460In Stock
1,000On Order
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
1 Channel
|
650 V
|
60 A
|
39.3 mOhms
|
- 10 V, + 22 V
|
3 V
|
48.6 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
₹1,350.94
-
187In Stock
|
Mouser Part No
511-SCT027W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
187In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
1 Channel
|
650 V
|
60 A
|
29 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
51 nC
|
- 55 C
|
+ 200 C
|
313 W
|
Enhancement
|
AEC-Q100
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
- SCT040H120G3AG
- STMicroelectronics
-
1:
₹1,268.77
-
841In Stock
|
Mouser Part No
511-SCT040H120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
|
|
841In Stock
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
54 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
₹1,336.60
-
629In Stock
-
600Expected 30-07-2027
|
Mouser Part No
511-SCT040W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
629In Stock
600Expected 30-07-2027
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q100
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
₹1,078.65
-
457In Stock
|
Mouser Part No
511-SCT040W65G3-4
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
457In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
₹1,268.77
-
429In Stock
|
Mouser Part No
511-SCT040W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
429In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
- SCT055TO65G3
- STMicroelectronics
-
1:
₹960.18
-
1,394In Stock
|
Mouser Part No
511-SCT055TO65G3
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
|
|
1,394In Stock
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
SMD/SMT
|
TOLL-8
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
3 V
|
31 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
₹1,810.48
-
43In Stock
-
600On Order
|
Mouser Part No
511-SCT025W120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
43In Stock
600On Order
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-3
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
₹1,318.45
-
20In Stock
-
1,200On Order
|
Mouser Part No
511-SCT070W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
20In Stock
1,200On Order
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
41 nC
|
- 55 C
|
+ 200 C
|
236 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
- SCT040H65G3AG
- STMicroelectronics
-
1:
₹1,257.31
-
525In Stock
-
1,000Expected 02-07-2027
|
Mouser Part No
511-SCT040H65G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
|
|
525In Stock
1,000Expected 02-07-2027
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
30 A
|
40 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
39.5 nC
|
- 55 C
|
+ 175 C
|
221 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
₹1,572.59
-
6In Stock
-
1,000Expected 24-09-2027
|
Mouser Part No
511-SCT018H65G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
6In Stock
1,000Expected 24-09-2027
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
79.4 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
₹1,912.71
-
3In Stock
-
1,200On Order
|
Mouser Part No
511-SCT025W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
3In Stock
1,200On Order
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- SCT040TO65G3
- STMicroelectronics
-
1:
₹1,071.96
-
8In Stock
-
1,800Expected 05-02-2027
|
Mouser Part No
511-SCT040TO65G3
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
|
|
8In Stock
1,800Expected 05-02-2027
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
SMD/SMT
|
TOLL-8
|
1 Channel
|
650 V
|
35 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
42.5 nC
|
- 55 C
|
+ 175 C
|
288 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
₹1,336.60
-
14In Stock
-
600Expected 29-10-2027
|
Mouser Part No
511-SCT040W120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
14In Stock
600Expected 29-10-2027
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-3
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A
- SCT011H75G3AG
- STMicroelectronics
-
1:
₹2,690.41
-
988On Order
-
New Product
|
Mouser Part No
511-SCT011H75G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A
|
|
988On Order
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q100
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
- SCT011HU75G3AG
- STMicroelectronics
-
1:
₹2,945.50
-
1,200Expected 06-08-2027
|
Mouser Part No
511-SCT011HU75G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
|
|
1,200Expected 06-08-2027
|
|
Min.: 1
Mult.: 1
:
600
|
|
|
SMD/SMT
|
HU3PAK-7
|
1 Channel
|
750 V
|
110 A
|
15 mOhms
|
- 10 V, + 22 V
|
3.2 V
|
154 nC
|
- 55 C
|
+ 175 C
|
652 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
- SCT016H120G3AG
- STMicroelectronics
-
1:
₹2,576.71
-
1,800On Order
|
Mouser Part No
511-SCT016H120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
|
|
1,800On Order
Factory Lead Time:
25 Weeks
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
1 Channel
|
1.2 kV
|
112 A
|
22 mOhms
|
- 10 V, + 22 V
|
3 V
|
150 nC
|
- 55 C
|
+ 175 C
|
652 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3AG
- STMicroelectronics
-
1:
₹1,754.11
-
1,997Expected 11-06-2027
|
Mouser Part No
511-SCT025H120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
1,997Expected 11-06-2027
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
₹2,203.15
-
998Expected 04-06-2027
|
Mouser Part No
511-SCT012H90G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
998Expected 04-06-2027
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
1 Channel
|
900 V
|
110 A
|
12 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
138 nC
|
- 55 C
|
+ 175 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
₹1,784.69
-
600Expected 05-11-2027
|
Mouser Part No
511-SCT018W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
600Expected 05-11-2027
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
77 nC
|
- 55 C
|
+ 200 C
|
398 W
|
Enhancement
|
AEC-Q101
|
|