New Transistors

Qorvo QPD2560L 300W GaN/SiC HEMT
Qorvo QPD2560L 300W GaN/SiC HEMT is a high‑power GaN-on-SiC High Electron Mobility Transistor (HEMT) designed for demanding L‑Band applications, operating across the 1.0GHz to 1.5GHz frequency range. Engineered to deliver robust RF performance, the Qorvo QPD2560L provides up to 55.4dBm of saturated output power, 15dB of large‑signal gain, and 65% drain efficiency, making the HEMT well‑suited for both CW and pulsed operation.