New Transistors
Texas Instruments 2N7002L 6V N-channel MOSFETs are designed to minimize the on-state resistance while maintaining fast switching performance. These MOSFETs are field-effect transistors in a plastic package with a low gate threshold voltage and low input capacitance. The 2N7002L N-channel MOSFETs feature a 6V drain-to-source voltage, 7V gate-to-source voltage, 1.4A source current, and 1.43A pulsed drain current (tp =1s). These MOSFETs operate over a -65°C to 150°C temperature range and include a 260°C lead temperature for soldering. Typical applications include personal electronics, building automation, and industrial automation.
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Texas Instruments 2N7002L 6V N-channel MOSFETsDesigned to minimize the on-state resistance while maintaining fast switching performance.18-05-2026
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Infineon Technologies CIPOS™ Prime Automotive CoolSiC™ Power ModulesPower Modules are designed for high performance in xEV applications.06-05-2026 -
onsemi NVBYST0D8N08X Single N-Channel Power MOSFETOptimized for high‑voltage operation and withstands fast switching and high-current stresses.14-04-2026 -
ROHM Semiconductor High-Density SiC Power ModulesTRCDRIVE pack™, DOT-247, and HSDIP20 packages contribute to high-performance power conversion.10-04-2026 -
iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFETLow switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.07-04-2026 -
onsemi NTMFD0D9N02P1E MOSFETDual N-channel MOSFET designed with low Rg for fast switching applications.06-04-2026 -
Vishay VS-HOT200C080 200A 80V Power MOSFET ModuleThis device reduces board space requirements by up to 15% compared to standard discrete solutions.02-04-2026 -
Toshiba N-Channel/P-Channel Power MOSFETsIdeal for high-speed switching, power management switches, DC-DC converters, and motor drivers.31-03-2026 -
STMicroelectronics STL059N4S8AG Power MOSFETA 40V N-channel enhancement mode Power MOSFET designed in Smart STripFET F8 technology.31-03-2026 -
Infineon Technologies OptiMOS™ 6 60V Power MOSFETsDelivers superior performance to OptiMOS 5 via robust power MOSFET technology.27-03-2026 -
Infineon Technologies N-Channel OptiMOS™ 7 25V Power MOSFETsApplication-optimized performance, enabling peak performance for data centers, servers, & AI.27-03-2026 -
iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFETDelivers ultra-low conduction and switching losses in a robust TO-220 package.24-03-2026 -
Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS)650V and 110mΩ normally-off Gallium Nitride (GaN) BDS in a compact TOLT package.20-03-2026 -
ROHM Semiconductor BST400D12P4A1x1 TRCDRIVE pack™ with Molded ModulesFeatures 1200V rated voltage in 41.6mm × 52.5mm package and integrates 4th Generation SiC MOSFETs.17-03-2026 -
Infineon Technologies Medium-Voltage CoolGaN™ Bidirectional SwitchesThese devices are a great fit for serving as battery disconnect switches in various applications.17-03-2026 -
Infineon Technologies OptiMOS™ 8 Power MOSFETsThese are N-channel, normal level 80V or 100V MOSFETs with very low on-resistance [RDS(ON)].17-03-2026 -
onsemi NVMFD5873NL Dual N-Channel Power MOSFETsDesigned for compact and efficient designs, including high thermal performance.13-03-2026 -
Diotec Semiconductor DI009N10PQ N-Channel Power MOSFETSupports a drain‑source voltage of 100V and delivers 9A continuous drain current at 25°C.10-03-2026 -
Diotec Semiconductor DI050N04BPT-AQ N-Channel Power MOSFETSupports a drain‑source voltage of 40V and delivers 50A continuous drain current at 25°C.10-03-2026 -
Diotec Semiconductor DI040N10D1-AQ N-Channel Power MOSFETSupports a drain‑source voltage of 100V and delivers 40A continuous drain current at 25°C.10-03-2026 -
Diotec Semiconductor DI045N10PT-AQ N-Channel Power MOSFETSupports a drain‑source voltage of 100V and delivers 45A continuous drain current at 25°C.10-03-2026 -
Qorvo QPD2560L 300W GaN/SiC HEMTDesigned for demanding L‑Band applications, operating across the 1.0GHz to 1.5GHz frequency range.09-03-2026 -
Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFETSupports a drain‑source voltage of 900V and delivers 2.7A at 25°C continuous drain current.06-03-2026 -
EPC EPC2302 Enhancement-Mode GaN Power TransistorEngineered for high-frequency DC-DC applications and 48V BLDC motor drives.05-03-2026 -
EPC EPC2304 Enhancement-Mode GaN Power TransistorHandles tasks where ultra-high switching frequency and low on-time are advantageous.05-03-2026