STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors
STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.
The HB2 series is an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, and in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
Features
- Maximum junction temperature:
- TJ = 175°C
- High-speed switching series
- Minimized tail current
- Very low saturation voltage
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery anti-parallel diode
- Lead-free package
Applications
- Photovoltaic inverters
- High frequency converters
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