STMicroelectronics STH315N10F7 STripFET™ VII DeepGATE™ Power MOSFETs
STMicroelectronics STH315N10F7 STripFET™ VII DeepGATE™ Power MOSFETs are AEC-Q101 automotive-qualified N-channel Power MOSFETs that combine best-in-class on-state resistance with low internal capacitances and gate charge, enhancing both conduction and switching efficiency. STH315N10F7 MOSFETs also have high avalanche ruggedness to survive potentially damaging conditions. With a 100V rating, these STripFET VII DeepGATE MOSFETs provide an adequate safety margin to withstand typical over-voltage surges. STH315N10F7 STripFET VII DeepGATE MOSFETs are also well-suited for highly rugged performance in automotive and switching applications.
Available in TO-220 or 2-lead or 6-lead H2PAK industry-standard packages, the STMicroelectronics STH315N10F7 STripFET VII DeepGATE Power MOSFETs help designers reduce board size and maximize power density.
Features
- AEC-Q101 qualified
- Ultra-low RDS(on)
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
- Available in TO-220 or 2-lead or 6-lead H2PAK packages
Applications
- Switching applications
Specifications
- 2.3mΩ maximum drain-source on-resistance (RDS(on))
- 100V drain-source voltage (VDS)
- ±20V gate-source voltage (VGS)
- 180A continuous drain current (ID)
- 720A pulsed drain current (IDM)
- 315W total dissipation at TC = +25°C (PTOT)
- 2.1W/°C derating factor
- 1J single pulse avalanche energy (EAS)
- -55°C to +175°C operating junction and storage temperature range (Tj, Tstg)
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| Part Number | Datasheet | Package/Case | Mounting Style |
|---|---|---|---|
| STH315N10F7-6 |  |
TO-263-7 | SMD/SMT |
| STH315N10F7-2 | |
H2PAK-2 | SMD/SMT |
| STP315N10F7 | |
TO-220-3 | Through Hole |