STMicroelectronics MDmesh™ M9 Power MOSFETs
STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.
Features
- Impressive Figure of Merit (RDS(on) x Qg)
- Impressive RDS(on) for 650V voltage range
- Low Qg
- High reverse diode dv/dt and MOSFET dv/dt ruggedness
- High power levels
- High power density and low conduction losses
- High efficiency and low switching power losses
- High switching speed
- High robustness and reliability for more compact designs
Applications
- Telecom servers and data centers
- 5G Power stations
- Flat TV panels and PC SMPS
- Fast chargers
- Solar microinverters
Videos
Application Focus: Test and Analysis
Additional Resource
Associated MOSFETs
STMicroelectronics STD65N160M9 N-channel Power MOSFET
Based on super-junction MDmesh M9 technology.
STMicroelectronics STP65N045M9 MDmesh M9 Power MOSFET
Designed for medium/high voltage MOSFETs featuring very low RDS(on) per area.
STMicroelectronics STP65N150M9 Power MOSFET
Based on super-junction MDmesh M9 technology.
STMicroelectronics STP60N043DM9 MDmesh DM9 Power MOSFET
For medium/high voltage featuring very low RDS(on) per area coupled with a fast-recovery diode.
STMicroelectronics Power MOSFETs
Broad range of breakdown voltages from -500V to 1500V.
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STMicroelectronics Standard Products
A broad range of drop-in replacements for general-purpose analog ICs, discretes, and serial EEPROMs.
| Part Number | Datasheet | Mounting Style | Id - Continuous Drain Current | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Pd - Power Dissipation |
|---|---|---|---|---|---|---|
| ST8L65N065DM9 |  |
SMD/SMT | 44 A | 4.5 V | 78 nC | 223 W |
| ST8L65N050DM9 | |
SMD/SMT | 55 A | 4.5 V | 107 nC | 167 W |
| STWA60N035M9 | |
Through Hole | 62 A | 4.2 V | 112 nC | 321 mW |
| STP60N043DM9 | |
Through Hole | 56 A | 4.5 V | 78.6 nC | 245 W |
| STP65N045M9 | |
Through Hole | 55 A | 4.2 V | 80 nC | 245 W |
| STH65N050DM9-7AG | |
SMD/SMT | 51 A | 4.5 V | 100 nC | 266 W |
| STHU65N050DM9AG | |
SMD/SMT | 51 A | 4.5 V | 100 nC | 245 W |
| ST8L60N065DM9 | |
SMD/SMT | 39 A | 4.5 V | 66 nC | 202 W |
| ST8L65N044M9 | |
SMD/SMT | 58 A | 4.2 V | 110 nC | 166 W |
| STH60N099DM9-2AG | |
SMD/SMT | 27 A | 4.5 V | 44 nC | 179 W |