STMicroelectronics STP80N240K6 MDmesh K6 Power MOSFET
STMicroelectronics STP80N240K6 MDmesh K6 Power MOSFET is based on the ultimate MDmesh K6 technology built on 20 years of STM experience on super junction technology. The high voltage N-channel power MOSFET offers an ultra-low gate charge and excellent RDS(on) x area. The ST STP80N240K6 800V Power MOSFET features best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Features
- Worldwide best RDS(on) x area
- Worldwide best FOM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
Applications
- Flyback topology-based applications
- LED lighting
- Chargers
- Adapters
Circuit Diagram
Related MOSFETs
STMicroelectronics STD80N240K6 800V 16A MDmesh K6 Power MOSFET
Features an excellent RDS(on) x area and a low Qg, enabling high switching speeds and low losses.
STMicroelectronics N-Channel MDmesh K6 Power MOSFETs
800V, Zener-protected, 100% avalanche tested, and ideal for flyback converters and LED lighting.
COMPLETE YOUR DESIGN
STMicroelectronics Standard Products
A broad range of drop-in replacements for general-purpose analog ICs, discretes, and serial EEPROMs.
Published: 2021-08-05
| Updated: 2024-06-25